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See Product Specifications
| номер части: | SISS52DN-T1-GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 6f065265b5ad79aa8b78335bb14c6420 |
| Current - Continuous Drain (Id) @ 25°C: | 09a6fc06105470131b5d98c0dddfd88a |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | 1022bb1db1af7ffe93d82c8e4cf992de |
| Vgs(th) (Max) @ Id: | 17ed95a87d7b17ee9a8302d07765c7da |
| Gate Charge (Qg) (Max) @ Vgs: | f42b3edaa3b0932caf53a646d86ff897 |
| Vgs (Max): | 4a0bddc863204f578d78f2933ee4fb4c |
| Input Capacitance (Ciss) (Max) @ Vds: | e2dc97b145a146021b6a5d4a18a15ea9 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 036c8313f702a90afb2b17b96854313b |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | d5f1963fdfe632ee20cad40682288c93 |
| Package / Case: | d5f1963fdfe632ee20cad40682288c93 |
