SQD23N06-31L_GE3

SQD23N06-31L_GE3

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SQD23N06-31L_GE3
Описание:
MOSFET N-CH 60V 23A TO252
Упаковка:
Tape & Reel (TR)
Datasheet:
SQD23N06-31L_GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SQD23N06-31L_GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:40eebc54315550f4a52f3ccff29ffa65
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:fb62dfd4b6836f68cec50c93d96a7eaa
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:899c161eae8ad25b8e5197bd5cd6af2d
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):df772bed8bd752209d37c036b224231b
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:7ada2e7f7b50fcad7566a70926a057cb
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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