SQJ401EP-T2_GE3

SQJ401EP-T2_GE3

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SQJ401EP-T2_GE3
Описание:
MOSFET P-CH 12V 32A PPAK SO-8
Упаковка:
Tape & Reel (TR)
Datasheet:
SQJ401EP-T2_GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SQJ401EP-T2_GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):fd06a160a7273ee2b718dbba07f948a2
Current - Continuous Drain (Id) @ 25°C:d7434a36c69b7f97b848da7c2ae22afd
Drive Voltage (Max Rds On, Min Rds On):ad55046ae2fc0687ff363bc051e1507d
Rds On (Max) @ Id, Vgs:406f68b8e0b90de5f32931e50752558a
Vgs(th) (Max) @ Id:f710eedc1bf5fdb1a1e1a08d92eb0502
Gate Charge (Qg) (Max) @ Vgs:29b87a4ace0d959d13d943d41c04a6b3
Vgs (Max):141ce97fa4644284a9f0bfb5e7811ba1
Input Capacitance (Ciss) (Max) @ Vds:4203508f77d6c270d16ff12abd4edf18
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):35e259c9e67ff8fd40b9e992f041f118
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdb17de75fc2484291d63ea33c94254f
Package / Case:cdb17de75fc2484291d63ea33c94254f
In Stock: 0
Stock:
0 Can Ship Immediately
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