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See Product Specifications
| номер части: | SQJQ112E-T1_GE3 |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Vishay Siliconix |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 227b5c7c7a2ed2ea3da210ed0860030d |
| Current - Continuous Drain (Id) @ 25°C: | 4cce7ef6e709c66d3161d7119911203e |
| Drive Voltage (Max Rds On, Min Rds On): | 76f7bec4411c6fbb49ed5d21d8974faf |
| Rds On (Max) @ Id, Vgs: | 84ffbb78cf7b0d52b30dea4b06a6e6ed |
| Vgs(th) (Max) @ Id: | 54e5d6e67176a5b9df661d089760961f |
| Gate Charge (Qg) (Max) @ Vgs: | e73258db6aabe9fd48ccdd7aac01aeac |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | 9235202f0d52858f9b86cf7d38e8e48c |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 7af6623f5e263e2cd5248ec1bff41ef0 |
| Operating Temperature: | 57d4d9eedc2deb0e981150db4dec7a0a |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | 1a3a8b18aa0df4848b2a2711c31863bb |
| Package / Case: | 1a3a8b18aa0df4848b2a2711c31863bb |
