SQV120N06-4M7L_GE3

SQV120N06-4M7L_GE3

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SQV120N06-4M7L_GE3
Описание:
MOSFET N-CH 60V 120A TO262-3
Упаковка:
Tape & Reel (TR)
Datasheet:
SQV120N06-4M7L_GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SQV120N06-4M7L_GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:faeb79830adbf4da55a7898a390e0366
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:f2d3a988181cccf62c90709a2cbe6567
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:80b23ff275e90b5c91641a592a095532
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):2f8fb1b958a63c9c2907182cbf2e2287
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:e4d2f08d35babedff7dce2dcec542532
Package / Case:3c85f5f088979d743b17a76deb22d687
In Stock: 0
Stock:
0 Can Ship Immediately
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