SUP60030E-GE3

SUP60030E-GE3

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SUP60030E-GE3
Описание:
MOSFET N-CH 80V 120A TO220AB
Упаковка:
Bulk
Datasheet:
SUP60030E-GE3 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:SUP60030E-GE3
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Vishay Siliconix
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):ebd7aaeec2792ddf9fe1af48370ec717
Current - Continuous Drain (Id) @ 25°C:b1be509671d214bd598752c2a709fdac
Drive Voltage (Max Rds On, Min Rds On):629920a74232f30d2b06ff2b54267c3b
Rds On (Max) @ Id, Vgs:79c68fff9e1ee9bd2cc7fa4e061386f9
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:866afa25e405b834975c10f6f68be0a0
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:71389ec4e91e0d4e62f2f38392f7024f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):925b824d4ea9a147ba322c6feb66115c
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:9b3b590b14408ced9e56cc56696084a1
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 0
Stock:
0 Can Ship Immediately
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