VQ1001P-2

VQ1001P-2

Images are for reference only
See Product Specifications

VQ1001P-2
Описание:
MOSFET 4N-CH 30V 0.83A 14DIP
Упаковка:
Tube
Datasheet:
VQ1001P-2 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:VQ1001P-2
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Arrays
Производитель:Vishay Siliconix
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:de8943b5758f9dcc1542c7f727bbb982
FET Feature:b1bdfad45563eb49e8648bcec381ba5b
Drain to Source Voltage (Vdss):9ec92e92d0efca44e7ef022a61c49068
Current - Continuous Drain (Id) @ 25°C:54fcd6665cba58c27d9a7a1a16decd1c
Rds On (Max) @ Id, Vgs:7572f3455309ed68579e2cffb4ed139d
Vgs(th) (Max) @ Id:a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:d242aee8dfff3cf75671a905d48c27b9
Power - Max:81c78acb776c670373de5044b3035187
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:d1af0578d083fe98bb249ea0715f1f5b
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
UPA2590T1H-T1-AT
UPA2590T1H-T1-AT
Renesas Electronics America Inc
POWER, 4.5A, 30V, N-CH MOSFET
FDC6561AN
FDC6561AN
onsemi
MOSFET 2N-CH 30V 2.5A SSOT6
IAUC45N04S6L063HATMA1
IAUC45N04S6L063HATMA1
Infineon Technologies
IAUC45N04S6L063HATMA1
DMN63D1LV-13
DMN63D1LV-13
Diodes Incorporated
MOSFET 2 N-CH 60V 550MA SOT563
SSM6N39TU,LF
SSM6N39TU,LF
Toshiba Semiconductor and Storage
MOSFET 2 N-CHANNEL 20V 1.6A UF6
UPA1890GR-9JG-E1-A
UPA1890GR-9JG-E1-A
Renesas Electronics America Inc
MOSFET N/P-CH 30V 8-SOIC
IXTL2X240N055T
IXTL2X240N055T
IXYS
MOSFET 2N-CH 55V 140A ISOPLUS I5
SI7236DP-T1-GE3
SI7236DP-T1-GE3
Vishay Siliconix
MOSFET 2N-CH 20V 60A PPAK SO-8
SI3529DV-T1-GE3
SI3529DV-T1-GE3
Vishay Siliconix
MOSFET N/P-CH 40V 2.5A 6-TSOP
VEC2616-TL-W
VEC2616-TL-W
onsemi
MOSFET N/P-CH 60V 3A/2.5A VEC8
BSM600D12P3G001
BSM600D12P3G001
Rohm Semiconductor
1200V, 576A, HALF BRIDGE, FULL S
SP8M6FU6TB
SP8M6FU6TB
Rohm Semiconductor
MOSFET N/P-CH 30V 5A/3.5A 8SOIC
Вас также может заинтересовать
2N7002-T1-GE3
2N7002-T1-GE3
Vishay Siliconix
MOSFET N-CH 60V 115MA TO236
SIR878BDP-T1-RE3
SIR878BDP-T1-RE3
Vishay Siliconix
MOSFET N-CH 100V 12A/42.5A PPAK
SIRA06DP-T1-GE3
SIRA06DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 40A PPAK SO-8
SI4896DY-T1-E3
SI4896DY-T1-E3
Vishay Siliconix
MOSFET N-CH 80V 6.7A 8SO
SIRA62DP-T1-RE3
SIRA62DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 30V 51.4A/80A PPAK
SQJ459EP-T2_GE3
SQJ459EP-T2_GE3
Vishay Siliconix
P-CHANNEL 60-V (D-S) 175C MOSFET
SIAA00DJ-T1-GE3
SIAA00DJ-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 20.1A/40A PPAK
IRLD024
IRLD024
Vishay Siliconix
MOSFET N-CH 60V 2.5A 4DIP
SI5481DU-T1-E3
SI5481DU-T1-E3
Vishay Siliconix
MOSFET P-CH 20V 12A PPAK
SI4684DY-T1-GE3
SI4684DY-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 16A 8SO
DG9233EDQ-T1-GE3
DG9233EDQ-T1-GE3
Vishay Siliconix
IC SWITCH DUAL SPST 8MSOP
DG9232DQ-T1-E3
DG9232DQ-T1-E3
Vishay Siliconix
IC SWITCH DUAL SPST 8MSOP