WNSC101200Q

WNSC101200Q

Images are for reference only
See Product Specifications

WNSC101200Q
Описание:
SILICON CARBIDE POWER DIODE
Упаковка:
Tube
Datasheet:
WNSC101200Q Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:WNSC101200Q
Категория:Discrete Semiconductor Products
Подкатегория:Diodes - Rectifiers - Single
Производитель:WeEn Semiconductors
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Diode Type:d3d951faf09c126fb512cb4341b7f72e
Voltage - DC Reverse (Vr) (Max):edca1d2343e4e5615ce51a879f622a76
Current - Average Rectified (Io):600f6857f966a3ecb5ca3022150669c1
Voltage - Forward (Vf) (Max) @ If:2d2f4582484ef955747986b021e8f2b1
Speed:4df7f8b19da044c5c3cd74ddd671445e
Reverse Recovery Time (trr):b680727d6f5a1bf2a32dc3e640b723ff
Current - Reverse Leakage @ Vr:576e2ce8038af99c6e137175cbf024b5
Capacitance @ Vr, F:4b62663e600231cee1b39a0cf2a88f9a
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:d292e75da6784e098598da0a8c4cc46b
Supplier Device Package:6425437fc133c9e30bbea849e97c14c1
Operating Temperature - Junction:77c8a005c820992ba63b5ddd2248b82d
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GSD2004WS-HE3-08
GSD2004WS-HE3-08
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 240V 225MA SOD323
BAV102,135
BAV102,135
Nexperia USA Inc.
DIODE GEN PURP 150V 250MA LLDS
PMEG2020EJ/ZL,115
PMEG2020EJ/ZL,115
Nexperia USA Inc.
NEXPERIA PMEG2020EJ - RECTIFIER
SS2PH5HM3/85A
SS2PH5HM3/85A
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 50V 2A DO220AA
RMPG06J-E3/73
RMPG06J-E3/73
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 1A MPG06
XBS013S15R-G
XBS013S15R-G
Torex Semiconductor Ltd
DIODE SCHOTTKY 30V 100MA SOD523
SS12P3LHM3_A/I
SS12P3LHM3_A/I
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 30V 12A TO277A
VI20150S-M3/4W
VI20150S-M3/4W
Vishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 20A 150V TO-262AA
S70V
S70V
GeneSiC Semiconductor
DIODE GEN PURP 1.4KV 70A DO5
B360A-13
B360A-13
Diodes Incorporated
DIODE SCHOTTKY 60V 3A SMA
VS-10ETF06SPBF
VS-10ETF06SPBF
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 600V 10A D2PAK
HER602G B0G
HER602G B0G
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 6A R-6
Вас также может заинтересовать
BYQ28E-200,127
BYQ28E-200,127
WeEn Semiconductors
DIODE ARRAY GP 200V 10A TO220AB
BYV415W-600PQ
BYV415W-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 15A TO247
WNSC2D04650XQ
WNSC2D04650XQ
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
WNSC10650WQ
WNSC10650WQ
WeEn Semiconductors
SILICON CARBIDE SCHOTTKY DIODE
WNSC021200Q
WNSC021200Q
WeEn Semiconductors
SILICON CARBIDE POWER DIODE
BYC20X-600PQ
BYC20X-600PQ
WeEn Semiconductors
DIODE GEN PURP 600V 20A TO220F
NXPSC04650XQ
NXPSC04650XQ
WeEn Semiconductors
DIODE SCHOTTKY 650V 4A TO220F
BTA204-800C,127
BTA204-800C,127
WeEn Semiconductors
TRIAC 800V 4A TO220AB
BTA225B-800B,118
BTA225B-800B,118
WeEn Semiconductors
TRIAC 800V 25A D2PAK
BT138X-800E,127
BT138X-800E,127
WeEn Semiconductors
TRIAC SENS GATE 800V 12A TO220-3
ACTT12B-800CTJ
ACTT12B-800CTJ
WeEn Semiconductors
ACTT12B-800CT/D2PAK/REEL 13" Q
BTA2008-1000D/L0EP
BTA2008-1000D/L0EP
WeEn Semiconductors
BTA2008-1000D/L01/TO-92/STANDA