W25Q16JVZPJM TR

W25Q16JVZPJM TR

Images are for reference only
See Product Specifications

W25Q16JVZPJM TR
Описание:
IC FLASH 16MBIT SPI/QUAD 8WSON
Упаковка:
Tape & Reel (TR)
Datasheet:
W25Q16JVZPJM TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W25Q16JVZPJM TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:f07b01453909b2de920445603c484ba7
Memory Size:cdd3e04c975e260a66de999702ebc1e5
Memory Interface:6146c3b4915fd779cee964cb600d254a
Clock Frequency:db39f009ed0f0567546073a7444bb112
Write Cycle Time - Word, Page:c46234c7cb1927ee403a1dbfb12f95e2
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:2cd0a4018674d195c97a414ad2f03249
Operating Temperature:d94bb8cd87c2ea48c6185cf092f528a5
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:104461358cfb8907f6561100064effee
Supplier Device Package:7f9b56bd9bc21243c3bee8a6b6f65926
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
GD25Q16CEIGR
GD25Q16CEIGR
GigaDevice Semiconductor (HK) Limited
IC FLASH 16MBIT SPI/QUAD 8USON
AT27C512R-70JU-T
AT27C512R-70JU-T
Microchip Technology
IC EPROM 512KBIT PARALLEL 32PLCC
MT29GZ5A3BPGGA-53AIT.87K TR
MT29GZ5A3BPGGA-53AIT.87K TR
Micron Technology Inc.
IC FLASH RAM 4G PARALLEL MCP
AT28HC256F-90JC
AT28HC256F-90JC
Microchip Technology
IC EEPROM 256KBIT PAR 32PLCC
MT49H16M16FM-5 TR
MT49H16M16FM-5 TR
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 144UBGA
70V3569S6DR
70V3569S6DR
Renesas Electronics America Inc
IC SRAM 576KBIT PARALLEL 208PQFP
70V9369L9PF8
70V9369L9PF8
Renesas Electronics America Inc
IC SRAM 288KBIT PARALLEL 100TQFP
MT46H64M32L2JG-6 IT:A TR
MT46H64M32L2JG-6 IT:A TR
Micron Technology Inc.
IC DRAM 2GBIT PARALLEL 168VFBGA
MT48LC16M16A2P-7E:G
MT48LC16M16A2P-7E:G
Micron Technology Inc.
IC DRAM 256MBIT PAR 54TSOP II
MT53B256M64D2NW-062 WT ES:C
MT53B256M64D2NW-062 WT ES:C
Micron Technology Inc.
IC DRAM 16GBIT 1600MHZ FBGA
MT53B2DBNP-DC TR
MT53B2DBNP-DC TR
Micron Technology Inc.
IC DRAM 12GBIT 200WFBGA
STK11C68-SF25TR
STK11C68-SF25TR
Cypress Semiconductor Corp
IC NVSRAM 64KBIT PARALLEL 28SOIC
Вас также может заинтересовать
W9412G6JB-5
W9412G6JB-5
Winbond Electronics
128MB DDR SDRAM X16, 200MHZ
W63AH6NBVABE TR
W63AH6NBVABE TR
Winbond Electronics
1GB LPDDR3, X16, 800MHZ, T&R
W29N02KVDIAF TR
W29N02KVDIAF TR
Winbond Electronics
2G-BIT NAND FLASH, 3V, 4-BIT ECC
W25N02JWTBIC TR
W25N02JWTBIC TR
Winbond Electronics
2G-BIT SERIAL NAND FLASH, 1.8V
W632GU6NB11I TR
W632GU6NB11I TR
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, INDU
W632GU6NB09I TR
W632GU6NB09I TR
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, INDU
W25Q256FVEIF TR
W25Q256FVEIF TR
Winbond Electronics
IC FLASH 256MBIT SPI/QUAD 8WSON
W25Q64FVSCB1
W25Q64FVSCB1
Winbond Electronics
IC FLASH 64MBIT SPI 104MHZ
W25Q128FVTIQ
W25Q128FVTIQ
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8VSOP
W25Q64JVSSJQ TR
W25Q64JVSSJQ TR
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8SOIC
W25Q256JWBIM TR
W25Q256JWBIM TR
Winbond Electronics
SPIFLASH, 1.8V, 256M-BIT, 4KB UN
W25Q16FWSNBQ
W25Q16FWSNBQ
Winbond Electronics
IC FLASH