W25R512NWEIQ TR

W25R512NWEIQ TR

Images are for reference only
See Product Specifications

W25R512NWEIQ TR
Описание:
SECURE SPIFLASH, 1.8V, 256MB+32M
Упаковка:
Tape & Reel (TR)
Datasheet:
W25R512NWEIQ TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W25R512NWEIQ TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:227b519e83a8b99329302ad2d37d0bbb
Technology:f07b01453909b2de920445603c484ba7
Memory Size:424923369ff72c92aa01a573d129fdf9
Memory Interface:33dc5312b091968f5a120c2484d40df8
Clock Frequency:db39f009ed0f0567546073a7444bb112
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:18a0d3218c3102a3913afb6175a979e7
Operating Temperature:9c68e451bbb7d57f411d396b5a2dbaff
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:104461358cfb8907f6561100064effee
Supplier Device Package:68795f86e92587cfc63f849a6ae46876
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
29110BJA
29110BJA
Harris Corporation
2K X 8 ASYNCHRONOUS CMOS SRAM
CAT25010HU4I-GT3
CAT25010HU4I-GT3
onsemi
IC EEPROM 1KBIT SPI 10MHZ 8UDFN
AS7C31024B-15TCNTR
AS7C31024B-15TCNTR
Alliance Memory, Inc.
IC SRAM 1MBIT PARALLEL 32TSOP I
IS45S16800F-7BLA1-TR
IS45S16800F-7BLA1-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 128MBIT PARALLEL 54TFBGA
5962-8687512YA
5962-8687512YA
Renesas Electronics America Inc
IC SRAM 8KBIT PARALLEL 48LCC
DS1225AB-200
DS1225AB-200
Analog Devices Inc./Maxim Integrated
IC NVSRAM 64KBIT PARALLEL 28EDIP
AT27C010-45TU
AT27C010-45TU
Microchip Technology
IC EPROM 1MBIT PARALLEL 32TSOP
AT49SV322DT-80TU
AT49SV322DT-80TU
Microchip Technology
IC FLASH 32MBIT PARALLEL 48TSOP
AT28HC256-70TU
AT28HC256-70TU
Microchip Technology
IC EEPROM 256KBIT PAR 28TSOP
MT29F4G08ABBEAM70M3WC1
MT29F4G08ABBEAM70M3WC1
Micron Technology Inc.
IC FLASH 4GBIT PARALLEL WAFER
MT29F512G08EBHAFJ4-3R:A TR
MT29F512G08EBHAFJ4-3R:A TR
Micron Technology Inc.
IC FLSH 512GBIT PARALLEL 132VBGA
S29GL128S11TFVV20
S29GL128S11TFVV20
Infineon Technologies
IC FLASH 128MBIT PARALLEL 56TSOP
Вас также может заинтересовать
W956D8MBYA5I
W956D8MBYA5I
Winbond Electronics
64MB HYPERRAM X8, 200MHZ, IND TE
W947D6HBHX5I
W947D6HBHX5I
Winbond Electronics
IC DRAM 128MBIT PARALLEL 60VFBGA
W25M512JVFIQ TR
W25M512JVFIQ TR
Winbond Electronics
IC FLASH 512MBIT SPI 16SOIC
W25Q512JVFIQ TR
W25Q512JVFIQ TR
Winbond Electronics
IC FLASH 512MBIT SPI/QUAD 16SOIC
W29N02KWDIBF TR
W29N02KWDIBF TR
Winbond Electronics
2G-BIT NAND FLASH, 1.8V, 4-BIT E
W29N02KWDIBF
W29N02KWDIBF
Winbond Electronics
2G-BIT NAND FLASH, 1.8V, 4-BIT E
W948D6FBHX5I
W948D6FBHX5I
Winbond Electronics
IC DRAM 256MBIT PARALLEL 60VFBGA
W25Q16CLSVIG
W25Q16CLSVIG
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8VSOP
W632GG6KB-15 TR
W632GG6KB-15 TR
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96WBGA
W25Q32JVZEJQ TR
W25Q32JVZEJQ TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8WSON
W25Q64FVSFJQ
W25Q64FVSFJQ
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 16SOIC
W25Q16DVWS
W25Q16DVWS
Winbond Electronics
IC FLASH