W27C512-45Z

W27C512-45Z

Images are for reference only
See Product Specifications

W27C512-45Z
Описание:
IC EEPROM 512KBIT PARALLEL 28DIP
Упаковка:
Tube
Datasheet:
W27C512-45Z Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W27C512-45Z
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tube
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3efd259d37c0879b70a60a5aa4169f1b
Memory Format:32b682b454fbc10d327ebcbcdb0b1936
Technology:32b682b454fbc10d327ebcbcdb0b1936
Memory Size:7aca92a04d9b057821194afb8b38764e
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:336d5ebc5436534e61d16e63ddfca327
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:a4788173c62af274eb34038ea1dd38c8
Voltage - Supply:73223b694086e0ea598dfc08720d5e22
Operating Temperature:0cdaf46cf173097c627a2ad0ebcd5015
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:30cb43129ae62de11712c82300d86ea5
Supplier Device Package:2029dca2679d203058ced4ee6a4fda66
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
93LC56BT-E/SN
93LC56BT-E/SN
Microchip Technology
IC EEPROM 2KBIT SPI 2MHZ 8SOIC
AS4C512M16D3LB-12BCN
AS4C512M16D3LB-12BCN
Alliance Memory, Inc.
IC DRAM 8GBIT PARALLEL 96FBGA
HM1-6514-8
HM1-6514-8
Harris Corporation
1024 X 4 CMOS SRAM
AT24C128W-10SI-2.7
AT24C128W-10SI-2.7
Microchip Technology
IC EEPROM 128KBIT I2C 1MHZ 8SOIC
AT28HC256-90SA
AT28HC256-90SA
Microchip Technology
IC EEPROM 256KBIT PAR 28SOIC
MT46V64M16TG-6T IT:A TR
MT46V64M16TG-6T IT:A TR
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 66TSOP
7134LA70J8
7134LA70J8
Renesas Electronics America Inc
IC SRAM 32KBIT PARALLEL 52PLCC
MT41J256M4JP-15E:G
MT41J256M4JP-15E:G
Micron Technology Inc.
IC DRAM 1GBIT PARALLEL 78FBGA
MT29C4G96MAZBACJG-5 WT
MT29C4G96MAZBACJG-5 WT
Micron Technology Inc.
IC FLASH RAM 4GBIT PAR 168VFBGA
IS25LQ020B-JULE
IS25LQ020B-JULE
ISSI, Integrated Silicon Solution Inc
IC FLASH 2MBIT SPI 90NM 8USON
70261S20PFG
70261S20PFG
Renesas Electronics America Inc
IC SRAM
1820023
1820023
Infineon Technologies
IC GATE NOR
Вас также может заинтересовать
W25Q16JWSSIQ TR
W25Q16JWSSIQ TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W987D2HBJX7E TR
W987D2HBJX7E TR
Winbond Electronics
IC DRAM 128MBIT PARALLEL 90VFBGA
W988D6FBGX7E TR
W988D6FBGX7E TR
Winbond Electronics
IC DRAM 256MBIT PARALLEL 54VFBGA
W25N02KVTCIU TR
W25N02KVTCIU TR
Winbond Electronics
IC FLASH 2GBIT SPI 24TFBGA
W66BM6NBUAGJ
W66BM6NBUAGJ
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
W25Q01NWZEIQ
W25Q01NWZEIQ
Winbond Electronics
SPIFLASH, 1G-BIT, 1.8V, 4KB UNIF
W25Q01NWTBIM
W25Q01NWTBIM
Winbond Electronics
SPIFLASH, 1G-BIT, 1.8V, 4KB UNIF
W25Q128JVAIQ
W25Q128JVAIQ
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8DIP
W25Q16JVSSJM TR
W25Q16JVSSJM TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W25Q64CVZEJG
W25Q64CVZEJG
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8WSON
W74M12JVZPIQ TR
W74M12JVZPIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON
W25Q64FWWA
W25Q64FWWA
Winbond Electronics
IC FLASH