W631GG6MB-11

W631GG6MB-11

Images are for reference only
See Product Specifications

W631GG6MB-11
Описание:
IC DRAM 1GBIT PARALLEL 96VFBGA
Упаковка:
Tray
Datasheet:
W631GG6MB-11 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W631GG6MB-11
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:b3a5a0955d52418db1dce7f5c7a1dace
Memory Size:fefdd95833e827d97d01d4e4836fdabe
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:111de3b2326b9485426380a322d90788
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:7e5e01fa50973b448e8d4e03ef016cfc
Voltage - Supply:e6b719e6dd441558d149d427532266d9
Operating Temperature:95ef9db0196c421a5cb13f5a519f4246
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2b46a7fce7d7b02703a69e4525ca06fd
Supplier Device Package:eb263212c74c9069df3c69fea1778ba2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
25AA640A-E/SN
25AA640A-E/SN
Microchip Technology
IC EEPROM 64KBIT SPI 10MHZ 8SOIC
70V3569S5BC
70V3569S5BC
Renesas Electronics America Inc
IC SRAM 576KBIT PAR 256CABGA
70V3599S166BCG
70V3599S166BCG
Renesas Electronics America Inc
IC SRAM 4.5MBIT PAR 256CABGA
MT48LC4M32B2TG-7:G
MT48LC4M32B2TG-7:G
Micron Technology Inc.
IC DRAM 128MBIT PAR 86TSOP II
M93S66-WMN6T
M93S66-WMN6T
STMicroelectronics
IC EEPROM 4KBIT SPI 2MHZ 8SO
M95080-MN6P
M95080-MN6P
STMicroelectronics
IC EEPROM 8KBIT SPI 10MHZ 8SO
7006S35PF
7006S35PF
Renesas Electronics America Inc
IC SRAM 128KBIT PARALLEL 64TQFP
IDT71V67602S150PF8
IDT71V67602S150PF8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 100TQFP
MT46H32M16LFBF-5 IT:B TR
MT46H32M16LFBF-5 IT:B TR
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60VFBGA
MT29C2G24MAAAAHAMD-5 IT
MT29C2G24MAAAAHAMD-5 IT
Micron Technology Inc.
IC FLASH RAM 2GBIT PAR 130VFBGA
S29GL512S10DHSS30
S29GL512S10DHSS30
Infineon Technologies
IC FLASH 512MBIT PARALLEL 64FBGA
CY62127DV30L-55BVXE
CY62127DV30L-55BVXE
Infineon Technologies
IC SRAM 1MBIT PARALLEL 48VFBGA
Вас также может заинтересовать
W25Q64JWXGIQ TR
W25Q64JWXGIQ TR
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8XSON
W9825G6KH-5 TR
W9825G6KH-5 TR
Winbond Electronics
IC DRAM 256MBIT PAR 54TSOP II
W25N02JWZEIF
W25N02JWZEIF
Winbond Electronics
2G-BIT SERIAL NAND FLASH, 1.8V
W25M512JWFIQ
W25M512JWFIQ
Winbond Electronics
SPIFLASH, 1.8V, 512M-BIT, 4KB UN
W9464G6JH-5
W9464G6JH-5
Winbond Electronics
IC DRAM 64MBIT PAR 66TSOP II
W25Q64FVZEJQ
W25Q64FVZEJQ
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8WSON
W25N512GWBIT
W25N512GWBIT
Winbond Electronics
512MB SERIAL NAND FLASH, 1.8V
W25Q81EWXHSE
W25Q81EWXHSE
Winbond Electronics
IC FLASH
W25Q80EWSSAG
W25Q80EWSSAG
Winbond Electronics
IC FLASH
W25Q64JWSSSQ
W25Q64JWSSSQ
Winbond Electronics
IC FLASH
W631GU6MB09I TR
W631GU6MB09I TR
Winbond Electronics
IC SDRAM 1GB X16 1066MHZ 96WBGA
W948D6FKB-6G
W948D6FKB-6G
Winbond Electronics
IC DRAM 256MBIT PARALLEL VFBGA