W631GG6MB11I TR

W631GG6MB11I TR

Images are for reference only
See Product Specifications

W631GG6MB11I TR
Описание:
IC DRAM 1GBIT PARALLEL 96VFBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
W631GG6MB11I TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W631GG6MB11I TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:b3a5a0955d52418db1dce7f5c7a1dace
Memory Size:fefdd95833e827d97d01d4e4836fdabe
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:111de3b2326b9485426380a322d90788
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:7e5e01fa50973b448e8d4e03ef016cfc
Voltage - Supply:e6b719e6dd441558d149d427532266d9
Operating Temperature:45558d1e10bd3de54f5b943037ce61b0
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:2b46a7fce7d7b02703a69e4525ca06fd
Supplier Device Package:eb263212c74c9069df3c69fea1778ba2
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IS43R83200D-6TL-TR
IS43R83200D-6TL-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PAR 66TSOP II
IS42S83200G-6TL-TR
IS42S83200G-6TL-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PAR 54TSOP II
M27C801-120B1
M27C801-120B1
STMicroelectronics
IC EPROM 8MBIT PARALLEL 32DIP
AT24C256-10PU-2.7
AT24C256-10PU-2.7
Microchip Technology
IC EEPROM 256KBIT I2C 1MHZ 8DIP
M29F800DB55N6
M29F800DB55N6
Micron Technology Inc.
IC FLASH 8MBIT PARALLEL 48TSOP
IDT71V3579S80PFI
IDT71V3579S80PFI
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 100TQFP
RC28F256M29EWLA
RC28F256M29EWLA
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 64FBGA
MT48H32M16LFB4-6 AAT:C
MT48H32M16LFB4-6 AAT:C
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 54VFBGA
24LC128T-E/SN16KVAO
24LC128T-E/SN16KVAO
Microchip Technology
IC EEPROM 128KBIT I2C 8SOIC
S25FL128SAGMFI000
S25FL128SAGMFI000
Infineon Technologies
IC FLASH 128MBIT SPI/QUAD 16SOIC
S25FL512SDPBHV213
S25FL512SDPBHV213
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 24BGA
CY7C1418BV18-250BZXC
CY7C1418BV18-250BZXC
Infineon Technologies
IC SRAM 36MBIT PARALLEL 165FBGA
Вас также может заинтересовать
W631GG8NB09I TR
W631GG8NB09I TR
Winbond Electronics
1GB DDR3 SDRAM, X8, 1066MHZ, IND
W9751G8NB25I
W9751G8NB25I
Winbond Electronics
IC DRAM 512MBIT PARALLEL 60VFBGA
W632GU6NB-09
W632GU6NB-09
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96VFBGA
W66CP2NQUAHJ
W66CP2NQUAHJ
Winbond Electronics
4GB LPDDR4, DDP, X32, 2133MHZ, -
W25Q64FVSFIG
W25Q64FVSFIG
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 16SOIC
W25Q256FVCIG
W25Q256FVCIG
Winbond Electronics
IC FLSH 256MBIT SPI/QUAD 24TFBGA
W978H2KBQX2E
W978H2KBQX2E
Winbond Electronics
IC DRAM 256MBIT PAR 168WFBGA
W972GG6JB-18 TR
W972GG6JB-18 TR
Winbond Electronics
IC DRAM 2GBIT PARALLEL 84WBGA
W29N04GZBIBA
W29N04GZBIBA
Winbond Electronics
IC FLASH 4GBIT PARALLEL 63VFBGA
W25Q16CVSNJG
W25Q16CVSNJG
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W25Q16JWUXIQ
W25Q16JWUXIQ
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8USON
W25Q16JWUUIM TR
W25Q16JWUUIM TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8USON