W632GU8MB-11

W632GU8MB-11

Images are for reference only
See Product Specifications

W632GU8MB-11
Описание:
IC DRAM 2GBIT PARALLEL 78VFBGA
Упаковка:
Tray
Datasheet:
W632GU8MB-11 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W632GU8MB-11
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:ec30c235d0eb792797af1aa1d11759a7
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:b3a5a0955d52418db1dce7f5c7a1dace
Memory Size:1a4ccc547477d0866c86bdc831432557
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:111de3b2326b9485426380a322d90788
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:7e5e01fa50973b448e8d4e03ef016cfc
Voltage - Supply:7c87c895fffc9655e054b8dc2c6cff2c
Operating Temperature:95ef9db0196c421a5cb13f5a519f4246
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:06a8c6bdc4f9496586463d9a97da7b22
Supplier Device Package:1ab1260675e0aab67c69458997de4fd7
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
71V65603S100PFG8
71V65603S100PFG8
Renesas Electronics America Inc
IC SRAM 9MBIT PARALLEL 100TQFP
IS63LV1024-10KI
IS63LV1024-10KI
ISSI, Integrated Silicon Solution Inc
IC SRAM 1MBIT PARALLEL 32SOJ
IDT71V416YS15Y8
IDT71V416YS15Y8
Renesas Electronics America Inc
IC SRAM 4MBIT PARALLEL 44SOJ
MT49H16M36BM-25:B
MT49H16M36BM-25:B
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144UBGA
MT53B4DCNQ-DC TR
MT53B4DCNQ-DC TR
Micron Technology Inc.
IC DRAM 200VFBGA
BR93G66F-3GTE2
BR93G66F-3GTE2
Rohm Semiconductor
IC EEPROM 4KBIT SPI 3MHZ 8SOP
S25FS256SAGNFI000
S25FS256SAGNFI000
Infineon Technologies
IC FLASH 256MBIT SPI/QUAD 8WSON
CY7C1347B-100AC
CY7C1347B-100AC
Rochester Electronics, LLC
IC SRAM 4.5MBIT 100MHZ 100LQFP
CYDM064B16-55BVXI
CYDM064B16-55BVXI
Infineon Technologies
IC SRAM 64KBIT PARALLEL 100VFBGA
CY7C1049CV33-10VXA
CY7C1049CV33-10VXA
Infineon Technologies
IC SRAM 4MBIT PARALLEL 36SOJ
MSP14LV320-E1-TH-001
MSP14LV320-E1-TH-001
Cypress Semiconductor Corp
IC MEMORY FLASH NOR
S34ML01G200BHI003
S34ML01G200BHI003
Infineon Technologies
IC FLASH 1GBIT PARALLEL 63BGA
Вас также может заинтересовать
W97AH2NBVA1I
W97AH2NBVA1I
Winbond Electronics
1GB LPDDR2, X32, 533MHZ, -40 ~ 8
W25X20CLSNIG TR
W25X20CLSNIG TR
Winbond Electronics
IC FLASH 2MBIT SPI 104MHZ 8SOIC
W77Q32JWSSIN TR
W77Q32JWSSIN TR
Winbond Electronics
SECURE SPIFLASH, 1.8V, 32M-BIT,
W9825G6KH-6I TR
W9825G6KH-6I TR
Winbond Electronics
IC DRAM 256MBIT PAR 54TSOP II
W29N01HVDINF TR
W29N01HVDINF TR
Winbond Electronics
1G-BIT NAND FLASH, 3V, 4-BIT ECC
W66BQ6NBUAGJ TR
W66BQ6NBUAGJ TR
Winbond Electronics
2GB LPDDR4X, X16, 1866MHZ, -40C~
W29GL128CH9B
W29GL128CH9B
Winbond Electronics
IC FLSH 128MBIT PARALLEL 64LFBGA
W25X40CLDAIG
W25X40CLDAIG
Winbond Electronics
IC FLASH 4MBIT SPI 104MHZ 8DIP
W25Q32DWSSIG TR
W25Q32DWSSIG TR
Winbond Electronics
IC FLASH 32MBIT SPI 104MHZ 8SOIC
W631GU8MB-15
W631GU8MB-15
Winbond Electronics
IC DRAM 1GBIT PARALLEL 78VFBGA
W631GU6MB12I
W631GU6MB12I
Winbond Electronics
IC DRAM 1GBIT PARALLEL 96VFBGA
W25Q128FWPIQ TR
W25Q128FWPIQ TR
Winbond Electronics
IC FLASH 128MBIT SPI/QUAD 8WSON