W66BM6NBUAFJ

W66BM6NBUAFJ

Images are for reference only
See Product Specifications

W66BM6NBUAFJ
Описание:
2GB LPDDR4X, X16, 1600MHZ, -40C~
Упаковка:
Tray
Datasheet:
W66BM6NBUAFJ Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W66BM6NBUAFJ
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:72ead85ac77751c98e798bd026a5c343
Memory Size:1a4ccc547477d0866c86bdc831432557
Memory Interface:efee71beece46f48f7dda32cb5272dac
Clock Frequency:8e3f1dda304cea6766975f0d2f6f863c
Write Cycle Time - Word, Page:372ba9b669a7baf6dbcfc5501a79e169
Access Time:49fa7314b3b0311c62ed8e24dc6a1c9f
Voltage - Supply:7cdb21ea6878e21d127d24527a3e7b68
Operating Temperature:43a5bb2737635d71a958849c28d5e34a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8c9b5006d481048b6783f920aaeb69f3
Supplier Device Package:1009764730fdcaedb3a3d1f02261bcf0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
70V659S12DRGI
70V659S12DRGI
Renesas Electronics America Inc
IC SRAM 4.5MBIT PARALLEL 208PQFP
AT93C46-10PU-2.7
AT93C46-10PU-2.7
Microchip Technology
IC EEPROM 1KBIT SPI 2MHZ 8DIP
RC28F256P30TFE
RC28F256P30TFE
Micron Technology Inc.
IC FLASH 256MBIT PAR 64EASYBGA
MT29F32G08CBACAWP-IT:C
MT29F32G08CBACAWP-IT:C
Micron Technology Inc.
IC FLSH 32GBIT PARALLEL 48TSOP I
MT46V64M8CY-5B AIT:J
MT46V64M8CY-5B AIT:J
Micron Technology Inc.
IC DRAM 512MBIT PARALLEL 60FBGA
IS41C16105C-50TLI
IS41C16105C-50TLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PAR 54TSOP II
IS45S16100E-7BLA1
IS45S16100E-7BLA1
ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PARALLEL 60TFBGA
MT46V32M16TG-5B IT:J
MT46V32M16TG-5B IT:J
Alliance Memory, Inc.
IC DRAM 512MBIT PAR 66TSOP II
7024L55PFG/S2899
7024L55PFG/S2899
Renesas Electronics America Inc
IC SRAM 64KBIT PARALLEL 100TQFP
MT29F128G08CFABBWP-12IT:B TR
MT29F128G08CFABBWP-12IT:B TR
Micron Technology Inc.
IC FLASH 128GBIT PAR 48TSOP I
CY7C1399-12VC
CY7C1399-12VC
Rochester Electronics, LLC
CACHE SRAM, 32KX8, 12NS PDSO28
S70FL01GSAGBHEC10
S70FL01GSAGBHEC10
Flip Electronics
IC FLASH 1GBIT SPI QUAD 24BGA
Вас также может заинтересовать
W9864G6KH-6
W9864G6KH-6
Winbond Electronics
IC DRAM 64MBIT PAR 54TSOP II
W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
W956D8MBYA5I TR
W956D8MBYA5I TR
Winbond Electronics
64MB HYPERRAM X8, 200MHZ, IND TE
W25N01GVTCIG
W25N01GVTCIG
Winbond Electronics
1G-BIT SERIAL NAND FLASH, 3V
W631GG8NB-11 TR
W631GG8NB-11 TR
Winbond Electronics
1GB DDR3 SDRAM, X8, 933MHZ, T&R
W631GU6NB-09 TR
W631GU6NB-09 TR
Winbond Electronics
1GB DDR3L 1.35V SDRAM, X16, 1066
W25N02KVTCIR
W25N02KVTCIR
Winbond Electronics
IC FLASH 2GBIT SPI 24TFBGA
W97BH2MBVA2E TR
W97BH2MBVA2E TR
Winbond Electronics
2GB LPDDR2, X32, 400MHZ, -25 ~ 8
W25N04KVTBIR TR
W25N04KVTBIR TR
Winbond Electronics
4G-BIT SERIAL NAND FLASH, 3V
W25Q32BVSSJG
W25Q32BVSSJG
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8SOIC
W25Q128JWBIM TR
W25Q128JWBIM TR
Winbond Electronics
IC FLSH 128MBIT SPI/QUAD 24TFBGA
W25Q32FVTBAQ
W25Q32FVTBAQ
Winbond Electronics
IC FLASH