W66BQ6NBUAFJ

W66BQ6NBUAFJ

Images are for reference only
See Product Specifications

W66BQ6NBUAFJ
Описание:
2GB LPDDR4X, X16, 1600MHZ, -40C~
Упаковка:
Tray
Datasheet:
W66BQ6NBUAFJ Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W66BQ6NBUAFJ
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:72ead85ac77751c98e798bd026a5c343
Memory Size:1a4ccc547477d0866c86bdc831432557
Memory Interface:efee71beece46f48f7dda32cb5272dac
Clock Frequency:8e3f1dda304cea6766975f0d2f6f863c
Write Cycle Time - Word, Page:372ba9b669a7baf6dbcfc5501a79e169
Access Time:49fa7314b3b0311c62ed8e24dc6a1c9f
Voltage - Supply:7cdb21ea6878e21d127d24527a3e7b68
Operating Temperature:43a5bb2737635d71a958849c28d5e34a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:8c9b5006d481048b6783f920aaeb69f3
Supplier Device Package:1009764730fdcaedb3a3d1f02261bcf0
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
71V124SA10TYG8
71V124SA10TYG8
Renesas Electronics America Inc
IC SRAM 1MBIT PARALLEL 32SOJ
IS45S16100H-7BLA1-TR
IS45S16100H-7BLA1-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PARALLEL 60TFBGA
IS61WV10248EDBLL-10TLI-TR
IS61WV10248EDBLL-10TLI-TR
ISSI, Integrated Silicon Solution Inc
IC SRAM 8MBIT PARALLEL 44TSOP II
7133SA35G
7133SA35G
Renesas Electronics America Inc
IC SRAM 32KBIT PARALLEL 68PGA
AT45DB041B-RI
AT45DB041B-RI
Microchip Technology
IC FLASH 4MBIT SPI 20MHZ 28SOIC
M25P16-VME6G
M25P16-VME6G
Micron Technology Inc.
IC FLASH 16MBIT SPI 75MHZ 8VDFPN
70V05S15J8
70V05S15J8
Renesas Electronics America Inc
IC SRAM 64KBIT PARALLEL 68PLCC
PZ28F064M29EWLA
PZ28F064M29EWLA
Micron Technology Inc.
IC FLASH 64MBIT PARALLEL 48BGA
W632GG6KB-12 TR
W632GG6KB-12 TR
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96WBGA
MT48LC16M16A2F4-6A:G
MT48LC16M16A2F4-6A:G
Alliance Memory, Inc.
IC DRAM 256MBIT PARALLEL 54VFBGA
BR93G86FVJ-3BGTE2
BR93G86FVJ-3BGTE2
Rohm Semiconductor
IC EEPROM 16K SPI 3MHZ 8TSSOP
CY7C027VN-15AXC
CY7C027VN-15AXC
Infineon Technologies
IC SRAM 512KBIT PARALLEL 100TQFP
Вас также может заинтересовать
W25Q16JVXGIQ TR
W25Q16JVXGIQ TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8XSON
W9864G2JH-6 TR
W9864G2JH-6 TR
Winbond Electronics
IC DRAM 64MBIT PAR 86TSOP II
W632GU6NB09I TR
W632GU6NB09I TR
Winbond Electronics
2GB DDR3L 1.35V SDRAM, X16, INDU
W25X40VSNIG
W25X40VSNIG
Winbond Electronics
IC FLASH 4MBIT SPI 75MHZ 8SOIC
W25X80VSFIG T&R
W25X80VSFIG T&R
Winbond Electronics
IC FLASH 8MBIT SPI 75MHZ 16SOIC
W632GG6KB-12
W632GG6KB-12
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96WBGA
W9412G6JH-4
W9412G6JH-4
Winbond Electronics
IC DRAM 128MBIT PAR 66TSOP II
W25Q32JWZPIG TR
W25Q32JWZPIG TR
Winbond Electronics
IC FLASH 32MBIT 8WSON
W25Q32BVTBJP TR
W25Q32BVTBJP TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 24TFBGA
W25Q64FWZPIF
W25Q64FWZPIF
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8WSON
W25Q16JLSSIG TR
W25Q16JLSSIG TR
Winbond Electronics
SPIFLASH, 16M-BIT, 4KB UNIFORM S
W25N512GVBIT
W25N512GVBIT
Winbond Electronics
512MB SERIAL NAND FLASH, 3V