W972GG6KB-18

W972GG6KB-18

Images are for reference only
See Product Specifications

W972GG6KB-18
Описание:
IC DRAM 2GBIT PARALLEL 84WBGA
Упаковка:
Tray
Datasheet:
W972GG6KB-18 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W972GG6KB-18
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:166c874e24924400308f15a04a09db9e
Memory Size:1a4ccc547477d0866c86bdc831432557
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:2dbe6b621ac4d3f513cc06bdfb8a41a7
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:1681458127af85c77c09629b0be8ab70
Voltage - Supply:f933f021ee78bec672349c20c213e375
Operating Temperature:14af5cdd53cda4648595f2cff8aa0b27
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:0b27812a19d3aad7a71b730a9601e53c
Supplier Device Package:689355d395c45562fa76bb6f111c90e6
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
AT25320AN-10SQ-2.7
AT25320AN-10SQ-2.7
Atmel
EEPROM, 4KX8, SERIAL, CMOS
W631GG8NB-15 TR
W631GG8NB-15 TR
Winbond Electronics
1GB DDR3 SDRAM, X8, 667MHZ T&R
70V9369L9PFG8
70V9369L9PFG8
Renesas Electronics America Inc
IC SRAM 288KBIT PARALLEL 100TQFP
MT52L1G32D4PG-093 WT:B TR
MT52L1G32D4PG-093 WT:B TR
Micron Technology Inc.
IC DRAM 32GBIT 1.066GHZ 178FBGA
AT29C257-12JI-T
AT29C257-12JI-T
Microchip Technology
IC FLASH 256KBIT PARALLEL 32PLCC
IS42S32800B-6T-TR
IS42S32800B-6T-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PAR 86TSOP II
M24256-BWMW6TG
M24256-BWMW6TG
STMicroelectronics
IC EEPROM 256KBIT I2C 1MHZ 8SO
MTFC64GJDDN-3M WT TR
MTFC64GJDDN-3M WT TR
Micron Technology Inc.
IC FLASH 512KBIT MMC 169LFBGA
5962-8687521UA
5962-8687521UA
Renesas Electronics America Inc
IC SRAM 8KBIT PARALLEL 48FPACK
CY7C1062DV33-10BGXI
CY7C1062DV33-10BGXI
Infineon Technologies
IC SRAM 16MBIT PARALLEL 119PBGA
S34MS01G200TFI900
S34MS01G200TFI900
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I
S34ML01G200TFV000
S34ML01G200TFV000
Infineon Technologies
IC FLASH 1GBIT PARALLEL 48TSOP I
Вас также может заинтересовать
W948V6KBHX5E TR
W948V6KBHX5E TR
Winbond Electronics
256MB LPDDR, X16, 200MHZ T&R
W947D6HBHX6E
W947D6HBHX6E
Winbond Electronics
IC DRAM 128MBIT PARALLEL 60VFBGA
W988D2FBJX6I TR
W988D2FBJX6I TR
Winbond Electronics
IC DRAM 256MBIT PARALLEL 90VFBGA
W97AH2NBVA1I TR
W97AH2NBVA1I TR
Winbond Electronics
1GB LPDDR2, X32, 533MHZ, -40 ~ 8
W29GL512SL9B
W29GL512SL9B
Winbond Electronics
IC FLSH 512MBIT PARALLEL 64LFBGA
W978H2KBVX1E
W978H2KBVX1E
Winbond Electronics
256MB LPDDR2, X32, 533MHZ, -25 ~
W978H6KBVX2I
W978H6KBVX2I
Winbond Electronics
IC DRAM 256MBIT PAR 134VFBGA
W25Q64FVSFIG TR
W25Q64FVSFIG TR
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 16SOIC
W632GG6KB-11
W632GG6KB-11
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96WBGA
W97AH2KBQX2E
W97AH2KBQX2E
Winbond Electronics
IC DRAM 1G PARALLEL 168WFBGA
W25Q16JWUXIM
W25Q16JWUXIM
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8USON
W25M02GWTCIG
W25M02GWTCIG
Winbond Electronics
2G-BIT SERIAL NAND FLASH, 1.8V