W978H6KBVX2I TR

W978H6KBVX2I TR

Images are for reference only
See Product Specifications

W978H6KBVX2I TR
Описание:
IC DRAM 256MBIT HSUL 12 134VFBGA
Упаковка:
Tape & Reel (TR)
Datasheet:
W978H6KBVX2I TR Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W978H6KBVX2I TR
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tape & Reel (TR)
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:d14a8619eb9eeb83a50139c23b2cb683
Memory Size:73d1e26658fc5d3df2fd0a3a892e5acd
Memory Interface:f66e7ab252a69a7baf0165f33ab84a13
Clock Frequency:900821b630d97a5511d7417a3020911f
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:ba14241b6090da409c56c167d732b649
Operating Temperature:9a35647ac43afd83ffa43b3066661fee
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:073bf5f758b08e8d902215c9d6796f7c
Supplier Device Package:29f321923e0d19e80b7978b0464685a3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
M95160-WMN6P
M95160-WMN6P
STMicroelectronics
IC EEPROM 16KBIT SPI 10MHZ 8SO
R1LV5256ESA-5SI#S1
R1LV5256ESA-5SI#S1
Renesas Electronics America Inc
IC SRAM 256KBIT PARALLEL 28TSOP
NM93C46LMT8
NM93C46LMT8
Fairchild Semiconductor
EEPROM, 64X16, SERIAL, CMOS
IS61LPS25618A-200TQLI-TR
IS61LPS25618A-200TQLI-TR
ISSI, Integrated Silicon Solution Inc
IC SRAM 4.5MBIT PARALLEL 100TQFP
71256S55DB
71256S55DB
Renesas Electronics America Inc
IC SRAM 256KBIT PAR 28CERDIP
IS61LPS51236A-250B3LI
IS61LPS51236A-250B3LI
ISSI, Integrated Silicon Solution Inc
IC SRAM 18MBIT PARALLEL 165TFBGA
M36W0R6050U4ZSE
M36W0R6050U4ZSE
Micron Technology Inc.
IC FLASH PSRAM 96M
IS49RL36160-107BLI
IS49RL36160-107BLI
ISSI, Integrated Silicon Solution Inc
IC DRAM 576MBIT PAR 168FCBGA
N25Q064A13ESFH0F TR
N25Q064A13ESFH0F TR
Micron Technology Inc.
IC FLSH 64MBIT SPI 108MHZ 16SOP2
BR25H256FJ-2ACE2
BR25H256FJ-2ACE2
Rohm Semiconductor
IC EEPROM 256KBIT SPI 8SOPJ
S25FL512SDSMFBG11
S25FL512SDSMFBG11
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
S29AL016J70TFI020A
S29AL016J70TFI020A
Infineon Technologies
IC MEMORY FLASH NOR
Вас также может заинтересовать
W25Q64JWSSIQ
W25Q64JWSSIQ
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8SOIC
W971GG6NB-25 TR
W971GG6NB-25 TR
Winbond Electronics
IC DRAM 1GBIT PARALLEL 84WBGA
W97AH6NBVA1I
W97AH6NBVA1I
Winbond Electronics
1GB LPDDR2, X16, 533MHZ, -40 ~ 8
W97BH2MBVA2J
W97BH2MBVA2J
Winbond Electronics
128MB SDR SDRAM X16, 166MHZ
W25Q32JVSFIQ TR
W25Q32JVSFIQ TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 16SOIC
W25N512GVPIR
W25N512GVPIR
Winbond Electronics
512MB SERIAL NAND FLASH, 3V
W25Q256JWEIQ
W25Q256JWEIQ
Winbond Electronics
SPIFLASH, 1.8V, 256M-BIT, 4KB UN
W29N01HZDINF TR
W29N01HZDINF TR
Winbond Electronics
1G-BIT NAND FLASH, 1.8V, 4-BIT E
W29GL128CH9B
W29GL128CH9B
Winbond Electronics
IC FLSH 128MBIT PARALLEL 64LFBGA
W97AH2KBQX2I
W97AH2KBQX2I
Winbond Electronics
IC DRAM 1G PARALLEL 168WFBGA
W25Q16JWUXIM
W25Q16JWUXIM
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8USON
W25Q81EWSSSG
W25Q81EWSSSG
Winbond Electronics
IC FLASH