W979H6KBVX1E

W979H6KBVX1E

Images are for reference only
See Product Specifications

W979H6KBVX1E
Описание:
512MB LPDDR2, X16, 533MHZ
Упаковка:
Tray
Datasheet:
W979H6KBVX1E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W979H6KBVX1E
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:a98c7ec8106cf16aced8afc464bc6bdf
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:adb82661e33b82b94495a0880f42fe63
Memory Size:b5269209046a63d59378081a82bc20ea
Memory Interface:f66e7ab252a69a7baf0165f33ab84a13
Clock Frequency:2dbe6b621ac4d3f513cc06bdfb8a41a7
Write Cycle Time - Word, Page:5d7d1c5958253366c51897ec594eda1c
Access Time:336d5ebc5436534e61d16e63ddfca327
Voltage - Supply:ba14241b6090da409c56c167d732b649
Operating Temperature:6ab30f54ad1cc3cf217e14506293c461
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:073bf5f758b08e8d902215c9d6796f7c
Supplier Device Package:29f321923e0d19e80b7978b0464685a3
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
93C66CT-E/MNY
93C66CT-E/MNY
Microchip Technology
IC EEPROM 4KBIT SPI 3MHZ 8TDFN
W9712G6KB-25 TR
W9712G6KB-25 TR
Winbond Electronics
IC DRAM 128MBIT PARALLEL 84TFBGA
GS880Z36CGT-300I
GS880Z36CGT-300I
GSI Technology Inc.
IC SRAM 9MBIT PARALLEL 100TQFP
IS42S16100E-5TL-TR
IS42S16100E-5TL-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 16MBIT PAR 50TSOP II
IDT71P79804S250BQI8
IDT71P79804S250BQI8
Renesas Electronics America Inc
IC SRAM 18MBIT PARALLEL 165CABGA
IDT71V632S8PF
IDT71V632S8PF
Renesas Electronics America Inc
IC SRAM 2MBIT PARALLEL 100TQFP
MT46V32M8P-5B L:M
MT46V32M8P-5B L:M
Micron Technology Inc.
IC DRAM 256MBIT PARALLEL 66TSOP
MT49H32M18BM-25E:B
MT49H32M18BM-25E:B
Micron Technology Inc.
IC DRAM 576MBIT PARALLEL 144UBGA
MT29F256G08EBCAGB16A3WC1-M
MT29F256G08EBCAGB16A3WC1-M
Micron Technology Inc.
TLC 256G DIE 32GX8
MT52L256M32D1V01MWC2 MS
MT52L256M32D1V01MWC2 MS
Micron Technology Inc.
LPDDR3 8G DIE 256MX32
IS43LR32320B-5BL
IS43LR32320B-5BL
ISSI, Integrated Silicon Solution Inc
IC DRAM 1GBIT PARALLEL 90LFBGA
S25FL512SAGMFMR13
S25FL512SAGMFMR13
Infineon Technologies
IC FLASH 512MBIT SPI/QUAD 16SOIC
Вас также может заинтересовать
W9751G6NB-25
W9751G6NB-25
Winbond Electronics
IC DRAM 512MBIT PARALLEL 84VFBGA
W948D2FBJX5E TR
W948D2FBJX5E TR
Winbond Electronics
IC DRAM 256MBIT PARALLEL 90VFBGA
W959D8NFYA4I
W959D8NFYA4I
Winbond Electronics
512MB HYPERRAM X8, 200MHZ, IND T
W979H6KBVX1I
W979H6KBVX1I
Winbond Electronics
512MB LPDDR2, X16, 533MHZ, -40 ~
W632GU8KB12I
W632GU8KB12I
Winbond Electronics
IC DRAM 2GBIT PARALLEL 78WBGA
W25Q16CLSNIG TR
W25Q16CLSNIG TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W25Q256FVFIP
W25Q256FVFIP
Winbond Electronics
IC FLASH 256MBIT SPI/QUAD 16SOIC
W631GU6MB15I
W631GU6MB15I
Winbond Electronics
IC DRAM 1GBIT PARALLEL 96VFBGA
W25Q32FVTCJQ TR
W25Q32FVTCJQ TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 24TFBGA
W25Q32JVSFSM
W25Q32JVSFSM
Winbond Electronics
IC FLASH
W25Q16JWSSSQ
W25Q16JWSSSQ
Winbond Electronics
IC FLASH
W25Q64CVWS
W25Q64CVWS
Winbond Electronics
IC FLASH