W9812G6KB-6

W9812G6KB-6

Images are for reference only
See Product Specifications

W9812G6KB-6
Описание:
256MB SDR SDRAM X16, 166MHZ,
Упаковка:
Tray
Datasheet:
W9812G6KB-6 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:W9812G6KB-6
Категория:Integrated Circuits (ICs)
Подкатегория:Memory
Производитель:Winbond Electronics
Упаковка:Tray
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
Memory Type:3e3af98b6b48c7e593d8d18863e3333b
Memory Format:ebae17841ce69e653df838d8c20ace8d
Technology:6caeb2f16a3554ac6b073c24b1c4e74b
Memory Size:52120e70c5bfeb2674ef9f92d32af1f6
Memory Interface:98402eecfbcefc336954458a01752131
Clock Frequency:90e442cb99cc5a493f20396ce3ee4be0
Write Cycle Time - Word, Page:336d5ebc5436534e61d16e63ddfca327
Access Time:90e61360885c5404bc478bd83164c13f
Voltage - Supply:98a45ecfd70f0d7f1126a04ef91d85b8
Operating Temperature:9ad8254a10c89f038f7ba3156cedf3c4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:27709233844694e0af0e4ee9a277df1b
Supplier Device Package:a6ddea95d92ec0402b361867808d6526
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IS43DR82560C-25DBL
IS43DR82560C-25DBL
ISSI, Integrated Silicon Solution Inc
IC DRAM 2GBIT PARALLEL 60TWBGA
25LC160C-E/ST
25LC160C-E/ST
Microchip Technology
IC EEPROM 16KBIT SPI 8TSSOP
IS43R16160D-5BLI-TR
IS43R16160D-5BLI-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM 256MBIT PARALLEL 60TFBGA
70V3589S133BCI
70V3589S133BCI
Renesas Electronics America Inc
IC SRAM 2MBIT PARALLEL 256CABGA
MT58L128L32F1T-8.5
MT58L128L32F1T-8.5
Micron Technology Inc.
IC SRAM 4MBIT PARALLEL 100TQFP
AT25256AW-10SU-1.8
AT25256AW-10SU-1.8
Microchip Technology
IC EEPROM 256KBIT SPI 8SOIC
7134LA25JI
7134LA25JI
Renesas Electronics America Inc
IC SRAM 32KBIT PARALLEL 52PLCC
M29W256GL7AZS6F TR
M29W256GL7AZS6F TR
Micron Technology Inc.
IC FLASH 256MBIT PARALLEL 64FBGA
MT42L64M64D2LL-18 WT:C
MT42L64M64D2LL-18 WT:C
Micron Technology Inc.
IC DRAM 4GBIT PARALLEL 216FBGA
IS46LD32128C-25BPLA1-TR
IS46LD32128C-25BPLA1-TR
ISSI, Integrated Silicon Solution Inc
IC DRAM
BR25080N-10SU-1.8
BR25080N-10SU-1.8
Rohm Semiconductor
IC EEPROM 8KBIT SPI 3MHZ 8SOIC
811600-73670880
811600-73670880
Infineon Technologies
IC FLASH NOR
Вас также может заинтересовать
W25Q64JWZPIQ TR
W25Q64JWZPIQ TR
Winbond Electronics
IC FLASH 64MBIT SPI/QUAD 8WSON
W25N02JWTBIC
W25N02JWTBIC
Winbond Electronics
2G-BIT SERIAL NAND FLASH, 1.8V
W972GG6JB25I TR
W972GG6JB25I TR
Winbond Electronics
IC DRAM 2GBIT PARALLEL 84WBGA
W948D6FBHX5E TR
W948D6FBHX5E TR
Winbond Electronics
IC DRAM 256MBIT PARALLEL 60VFBGA
W25Q32FWZPIG TR
W25Q32FWZPIG TR
Winbond Electronics
IC FLASH 32MBIT SPI/QUAD 8WSON
W631GG6KB11I
W631GG6KB11I
Winbond Electronics
IC DRAM 1GBIT PARALLEL 96WBGA
W25Q16JVUUJM TR
W25Q16JVUUJM TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8USON
W25Q16DVSSJP TR
W25Q16DVSSJP TR
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W25Q16DVSSJG
W25Q16DVSSJG
Winbond Electronics
IC FLASH 16MBIT SPI/QUAD 8SOIC
W632GG6NB09J
W632GG6NB09J
Winbond Electronics
IC DRAM 2GBIT PARALLEL 96VFBGA
W25M512JWCIQ
W25M512JWCIQ
Winbond Electronics
SPIFLASH, 1.8V, 512M-BIT, 4KB UN
W631GG8MB09I
W631GG8MB09I
Winbond Electronics
IC SDRAM 1GB X8 1066MHZ 78WBGA