YJG60G10A-F1-0100HF

YJG60G10A-F1-0100HF

Images are for reference only
See Product Specifications

YJG60G10A-F1-0100HF
Описание:
N-CH MOSFET 100V 60A PDFN5060-8L
Упаковка:
Tape & Reel (TR)
Datasheet:
YJG60G10A-F1-0100HF Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:YJG60G10A-F1-0100HF
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Yangzhou Yangjie Electronic Technology Co.,Ltd
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:1551d0db07ff2a9a5117bf21afa2832a
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:24ead6ed23d8e61b25fd256c1d72187e
Vgs(th) (Max) @ Id:9238c44d66e9d51854326c16b3397896
Gate Charge (Qg) (Max) @ Vgs:f1d4411c14a38876d735f24f8437b43a
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d2b068fd70cebe7314cd07674a092b3c
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):3d4ce2eff7febd30c0a1a40de8c1319b
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:85804fba97d67c7de29f828b662181f9
Package / Case:e771faa948f6e9d3932873ffc2b5e24e
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PMV90ENE215
PMV90ENE215
NXP USA Inc.
SMALL SIGNAL N-CHANNEL MOSFET
BSP373L6327
BSP373L6327
Infineon Technologies
N-CHANNEL POWER MOSFET
UPA2794AGR-E1-AT
UPA2794AGR-E1-AT
Renesas Electronics America Inc
N-CHANNEL POWER MOSFET
IPP65R090CFD7XKSA1
IPP65R090CFD7XKSA1
Infineon Technologies
HIGH POWER_NEW
IRFBF20STRLPBF
IRFBF20STRLPBF
Vishay Siliconix
MOSFET N-CH 900V 1.7A D2PAK
IRFR3708
IRFR3708
Infineon Technologies
MOSFET N-CH 30V 61A DPAK
IRF6611TR1PBF
IRF6611TR1PBF
Infineon Technologies
MOSFET N-CH 30V 32A DIRECTFET
AO4706
AO4706
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 30V 16.5A 8SOIC
IXTC130N15T
IXTC130N15T
IXYS
MOSFET N-CH 150V ISOPLUS220
IPW65R280E6FKSA1
IPW65R280E6FKSA1
Infineon Technologies
MOSFET N-CH 650V 13.8A TO247-3
IPD26DP06NMSAUMA1
IPD26DP06NMSAUMA1
Infineon Technologies
MOSFET P-CH 60V TO252-3
RJK0451DPB-WS#J5
RJK0451DPB-WS#J5
Renesas Electronics America Inc
IGBT
Вас также может заинтересовать
SMBJ40A-F1-0000HF
SMBJ40A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 40VWM 64.5VC DO214AA
KBL410-A1-0000
KBL410-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 4A KBL
GBJ1510A-B1-0000
GBJ1510A-B1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 15A 6KBJ
KBU2510-A2-0000
KBU2510-A2-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 25A KBU
BAS70-04-F2-0000HF
BAS70-04-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
SCHOTTKY DIODE 70V 0.07A SOT-23-
GS2MA-F1-0000HF
GS2MA-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 2A DO214AC
FR105G-D1-3000
FR105G-D1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 1A DO41
H1MF-F1-0000HF
H1MF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 1A SMAF
SR3200-D1-0000
SR3200-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 200V 3A DO201AD
BZT52B39S-F2-0000HF
BZT52B39S-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 39V 0.2W SOD-323
BZT52C8V2S-F2-0000HF
BZT52C8V2S-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
ZENER DIODE 8.2V 0.2W SOD-323
2N7002-F2-0000HF
2N7002-F2-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
N-CH MOSFET 60V 0.34A SOT-23-3L