YJL2304A-F2-0100HF

YJL2304A-F2-0100HF

Images are for reference only
See Product Specifications

YJL2304A-F2-0100HF
Описание:
N-CH MOSFET 30V 3.6A SOT-23-3L
Упаковка:
Tape & Reel (TR)
Datasheet:
YJL2304A-F2-0100HF Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:YJL2304A-F2-0100HF
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Yangzhou Yangjie Electronic Technology Co.,Ltd
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:c985a4ecf583f7bf51241a68fb32b769
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:02495c9301a245ecdb18a405fc73cce2
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:92d3e99529aedc943f555c5479be3368
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:6a84376ecf25f00ea847d048178791fc
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):4c6a955db65e87d580766aee735f1644
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:cdbfc7f87dda2b41686a11d9db7bf62e
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
EPC2214
EPC2214
EPC
GANFET N-CH 80V 10A DIE
DMN3016LK3-13
DMN3016LK3-13
Diodes Incorporated
MOSFET N-CH 30V 12.4A TO252
IRF7401TRPBF
IRF7401TRPBF
Infineon Technologies
MOSFET N-CH 20V 8.7A 8SO
NVTFWS014P04M8LTAG
NVTFWS014P04M8LTAG
onsemi
MOSFET P-CH 40V 11.3A/49A 8WDFN
DMN3300UQ-7
DMN3300UQ-7
Diodes Incorporated
MOSFET BVDSS: 25V~30V SOT23 T&R
AOT11N70
AOT11N70
Alpha & Omega Semiconductor Inc.
MOSFET N-CH 700V 11A TO220
STP34NM60ND
STP34NM60ND
STMicroelectronics
MOSFET N-CH 600V 29A TO220
IRF1010NSTRL
IRF1010NSTRL
Infineon Technologies
MOSFET N-CH 55V 85A D2PAK
IRLR3714PBF
IRLR3714PBF
Infineon Technologies
MOSFET N-CH 20V 36A DPAK
IXTY50N085T
IXTY50N085T
IXYS
MOSFET N-CH 85V 50A TO252
STD70N2LH5
STD70N2LH5
STMicroelectronics
MOSFET N-CH 25V 48A DPAK
TK4P55D(T6RSS-Q)
TK4P55D(T6RSS-Q)
Toshiba Semiconductor and Storage
MOSFET N-CH 550V 4A DPAK
Вас также может заинтересовать
SMAJ15A-F1-0000HF
SMAJ15A-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 15VWM 24.4VC DO214AC
SMCJ36CA-F1-0000
SMCJ36CA-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 36VWM 58.1VC DO214AB
1.5KE400A-D1-0000
1.5KE400A-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
TVS DIODE 342VWM 548VC DO201AE
GBJ210-B1-3000
GBJ210-B1-3000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 1000V 2A 2KBJ
GBU406-B1-0000HF
GBU406-B1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 600V 4A GBU
KBPC606-A1-0000
KBPC606-A1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
RECT BRIDGE 600V 6A KBPC6
M7-F1-0000
M7-F1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 1A DO214AC
E2JF-F1-0000HF
E2JF-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A SMAF
MUR460-D1-0000
MUR460-D1-0000
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 4A DO201AD
H1M-F1-0000HF
H1M-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 1000V 1A SOD123FL
GR2J-F1-0000HF
GR2J-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE GEN PURP 600V 2A DO214AA
SS315B-F1-0000HF
SS315B-F1-0000HF
Yangzhou Yangjie Electronic Technology Co.,Ltd
DIODE SCHOTTKY 150V 3A DO214AA