Diodes - Bridge Rectifiers
7073 Предметы
PDF Производитель, номер детали запрос цен Ряд Упаковка Product StatusDiode TypeTechnologyVoltage - Peak Reverse (Max)Current - Average Rectified (Io)Voltage - Forward (Vf) (Max) @ IfCurrent - Reverse Leakage @ VrOperating TemperatureMounting TypePackage / CaseSupplier Device Package
B500C5000A
B500C5000A
1PH BRIDGE 30X20X3.6 1000V 5A
Diotec Semiconductor
Box ActiveSingle PhaseStandard1 kV4 A1 V @ 5 A5 µA @ 1000 V-50°C ~ 150°C (TJ)Through Hole4-SIP4-SIP
DBF150G
DBF150G
15 A SILICON DIFFUSED JUNCTION T
Sanyo
Bulk ActiveSingle PhaseStandard600 V3.2 A1.1 V @ 7.5 A10 µA @ 600 V150°C (TJ)Through Hole4-SIP, DBF-
NTE53000
NTE53000
BRIDGE-200VRM 10A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard200 V10 A1.1 V @ 5 A10 µA @ 200 V-65°C ~ 125°C (TJ)---
B500C7000A
B500C7000A
1PH BRIDGE 30X20X3.6 1000V 7A
Diotec Semiconductor
Box ActiveSingle PhaseStandard1 kV4.8 A1 V @ 5 A5 µA @ 1000 V-50°C ~ 150°C (TJ)Through Hole4-SIP4-SIP
NTE5305
NTE5305
R-SI BRG 600V 1.5A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard600 V1.5 A1 V @ 1 A10 µA @ 600 V-55°C ~ 125°C (TJ)Through Hole4-Circular-
GBJ2006-BP
GBJ2006-BP
BRIDGE RECT 1PHASE 600V 20A GBJ
Micro Commercial Co
Bulk ActiveSingle PhaseStandard600 V20 A1.05 V @ 10 A10 µA @ 400 V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJGBJ
NTE169
NTE169
R-SI BRIDGE 600V 2A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard600 V2 A1.1 V @ 2 A10 µA @ 600 V-55°C ~ 165°C (TJ)Through Hole4-SIP4-SIP
NTE53001
NTE53001
BRIDGE-400VRM 10A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard600 V8 A1.1 V @ 5 A10 µA @ 600 V-55°C ~ 150°C (TJ)---
TS15P06G
TS15P06G
BRIDGE RECT 1P 800V 15A TS-6P
Taiwan Semiconductor Corporation
Tube ActiveSingle PhaseStandard800 V15 A1.1 V @ 15 A10 µA @ 800 V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
TS20P05G
TS20P05G
BRIDGE RECT 1P 600V 20A TS-6P
Taiwan Semiconductor Corporation
Tube ActiveSingle PhaseStandard600 V20 A1.1 V @ 20 A10 µA @ 600 V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
TS20P06G
TS20P06G
BRIDGE RECT 1P 800V 20A TS-6P
Taiwan Semiconductor Corporation
Tube ActiveSingle PhaseStandard800 V20 A1.1 V @ 20 A10 µA @ 800 V-55°C ~ 150°C (TJ)Through Hole4-SIP, TS-6PTS-6P
GBJ3502-BP
GBJ3502-BP
BRIDGE RECT 1PHASE 200V 35A GBJ
Micro Commercial Co
Tube ActiveSingle PhaseStandard200 V35 A1.05 V @ 17.5 A10 µA @ 200 V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJGBJ
GBJ3501-BP
GBJ3501-BP
BRIDGE RECT 1PHASE 100V 35A GBJ
Micro Commercial Co
Tube ActiveSingle PhaseStandard100 V35 A1.05 V @ 17.5 A10 µA @ 100 V-55°C ~ 150°C (TJ)Through Hole4-SIP, GBJGBJ
GBUK8G
GBUK8G
1PH BRIDGE GBU 380V 8A
Diotec Semiconductor
Box ActiveSingle PhaseStandard380 V8 A900 mV @ 8 A5 µA @ 380 V-50°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
GBUK8D
GBUK8D
1PH BRIDGE GBU 190V 8A
Diotec Semiconductor
Box ActiveSingle PhaseStandard190 V8 A900 mV @ 8 A5 µA @ 190 V-50°C ~ 150°C (TJ)Through Hole4-SIP, GBUGBU
NTE5306
NTE5306
R-SI BRG 800V 1.5A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard800 V1.5 A1 V @ 1 A10 µA @ 800 V-55°C ~ 125°C (TJ)Through Hole4-Circular-
NTE53002
NTE53002
BRIDGE-600VRM 10A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard600 V10 A1.1 V @ 5 A10 µA @ 600 V-65°C ~ 125°C (TJ)---
KBL406G
KBL406G
BRIDGE RECT 1PHASE 800V 4A KBL
Taiwan Semiconductor Corporation
Tray ActiveSingle PhaseStandard800 V4 A1.1 V @ 4 A10 µA @ 800 V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBLKBL
KBL405G
KBL405G
BRIDGE RECT 1PHASE 600V 4A KBL
Taiwan Semiconductor Corporation
Tray ActiveSingle PhaseStandard600 V4 A1.1 V @ 4 A10 µA @ 600 V-55°C ~ 150°C (TJ)Through Hole4-SIP, KBLKBL
NTE5318
NTE5318
R-SI BRIDGE 200V 4A
NTE Electronics, Inc
Bag ActiveSingle PhaseStandard200 V4 A1 V @ 3 A10 µA @ 200 V-55°C ~ 125°C (TJ)Through Hole4-ESIP4-SIP