GoodChip

Diodes - Rectifiers - Single

48585 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	Diode Type	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Speed	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Capacitance @ Vr, F	Mounting Type	Package / Case	Supplier Device Package	Operating Temperature - Junction
APT100S20BG DIODE SCHOTTKY 200V 120A TO247 Microchip Technology		Tube	Active	Schottky	200 V	120A	950 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	70 ns	2 mA @ 200 V	-	Through Hole	TO-247-2	TO-247 [B]	-55°C ~ 150°C
STTH6004W DIODE GEN PURP 400V 60A DO247 STMicroelectronics		Tube	Active	Standard	400 V	60A	1.2 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	50 µA @ 400 V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
1N5806US DIODE GEN PURP 150V 1A D5A Microchip Technology		Bulk	Active	Standard	150 V	1A	875 mV @ 1 A	Fast Recovery =< 500ns, > 200mA (Io)	25 ns	1 µA @ 150 V	25pF @ 10V, 1MHz	Surface Mount	SQ-MELF, A	D-5A	-65°C ~ 175°C
STTH6012W DIODE GEN PURP 1.2KV 60A DO247 STMicroelectronics		Tube	Active	Standard	1200 V	60A	2.25 V @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	125 ns	30 µA @ 1200 V	-	Through Hole	DO-247-2 (Straight Leads)	DO-247	175°C (Max)
1N6642US DIODE GEN PURP 75V 300MA D5D Microchip Technology		Bulk	Active	Standard	75 V	300mA	1.2 V @ 100 mA	Fast Recovery =< 500ns, > 200mA (Io)	5 ns	500 nA @ 75 V	5pF @ 0V, 1MHz	Surface Mount	SQ-MELF, D	D-5D	-65°C ~ 175°C
DSP45-18A POWER DIODE DISCRETES-RECTIFIER IXYS		Tube	Active	Standard	1800 V	45A	1.26 V @ 45 A	Standard Recovery >500ns, > 200mA (Io)	-	40 µA @ 1800 V	18pF @ 400V, 1MHz	Through Hole	TO-247-3	TO-247 (IXTH)	-40°C ~ 175°C
IDH12SG60CXKSA2 DIODE SCHOTTKY 600V 12A TO220-2 Infineon Technologies	CoolSiC™+	Tube	Active	Silicon Carbide Schottky	600 V	12A (DC)	2.1 V @ 12 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 600 V	310pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
1N5809US DIODE GEN PURP 100V 3A B-MELF Microchip Technology		Bulk	Active	Standard	100 V	3A	875 mV @ 4 A	Fast Recovery =< 500ns, > 200mA (Io)	30 ns	5 µA @ 100 V	60pF @ 10V, 1MHz	Surface Mount	SQ-MELF, B	B, SQ-MELF	-65°C ~ 175°C
GB05MPS17-263 1700V 5A TO-263-7 SIC SCHOTTKY M GeneSiC Semiconductor	SiC Schottky MPS™	Tube	Active	Silicon Carbide Schottky	1700 V	18A (DC)	-	No Recovery Time > 500mA (Io)	-	-	470pF @ 1V, 1MHz	Surface Mount	TO-263-8, D²Pak (7 Leads + Tab), TO-263CA	TO-263-7	-55°C ~ 175°C
GD10MPS17H 1700V 10A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	SiC Schottky MPS™	Tube	Active	Silicon Carbide Schottky	1700 V	28A (DC)	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 1700 V	721pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
SICRF101200 DIODE SCHOTTKY SILICON CARBIDE S SMC Diode Solutions		Tube	Active	Silicon Carbide Schottky	1200 V	10A	1.8 V @ 10 A	No Recovery Time > 500mA (Io)	0 ns	100 µA @ 1200 V	640pF @ 0V, 1MHz	Through Hole	TO-220-2 Full Pack, Isolated Tab	ITO-220AC	-55°C ~ 175°C
IDH20G65C6XKSA1 DIODE SCHOTTKY 650V 41A TO220-2 Infineon Technologies		Tube	Active	Silicon Carbide Schottky	650 V	41A (DC)	1.35 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	67 µA @ 420 V	970pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2	-55°C ~ 175°C
MSC030SDA120B DIODE SCHOTTKY 1.2KV 30A TO247 Microchip Technology		Tube	Active	Silicon Carbide Schottky	1200 V	30A (DC)	1.5 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	-	-	Through Hole	TO-247-2	TO-247	-
IDH20G65C5XKSA2 DIODE SCHOTKY 650V 20A TO220-2-1 Infineon Technologies	CoolSiC™+	Tube	Active	Silicon Carbide Schottky	650 V	20A (DC)	1.7 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	210 µA @ 650 V	590pF @ 1V, 1MHz	Through Hole	TO-220-2	PG-TO220-2-1	-55°C ~ 175°C
63SPB100A DIODE SCHOTTKY 100V 60A SPD-2A SMC Diode Solutions		Bulk	Active	Schottky	100 V	60A	870 mV @ 60 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 100 V	1500pF @ 5V, 1MHz	Surface Mount	SPD-2A	SPD-2A	-55°C ~ 175°C
VS-85HFR60 DIODE GEN PURP 600V 85A DO203AB Vishay General Semiconductor - Diodes Division		Bulk	Active	Standard, Reverse Polarity	600 V	85A	1.2 V @ 267 A	Standard Recovery >500ns, > 200mA (Io)	-	9 mA @ 600 V	-	Chassis, Stud Mount	DO-203AB, DO-5, Stud	DO-203AB (DO-5)	-65°C ~ 180°C
IDW30G65C5XKSA1 DIODE SCHOTTKY 650V 30A TO247-3 Infineon Technologies	CoolSiC™+	Tube	Active	Silicon Carbide Schottky	650 V	30A (DC)	1.7 V @ 30 A	No Recovery Time > 500mA (Io)	0 ns	220 µA @ 650 V	860pF @ 1V, 1MHz	Through Hole	TO-247-3	PG-TO247-3	-55°C ~ 175°C
UJ3D1725K2 1700V 25A SIC SCHOTTKY DIODE G3, UnitedSiC	Automotive, AEC-Q101	Tube	Active	Silicon Carbide Schottky	1700 V	25A (DC)	1.7 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	360 µA @ 1700 V	1500pF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
GD25MPS17H 1700V 25A TO-247-2 SIC SCHOTTKY GeneSiC Semiconductor	SiC Schottky MPS™	Tube	Active	Silicon Carbide Schottky	1700 V	56A (DC)	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	1.083nF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C
UJ3D1250K2 1200V 50A SIC SCHOTTKY DIODE G3, UnitedSiC		Tube	Active	Silicon Carbide Schottky	1200 V	50A (DC)	1.7 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	400 µA @ 1200 V	2.34nF @ 1V, 1MHz	Through Hole	TO-247-2	TO-247-2	-55°C ~ 175°C