GoodChip

Transistors - Bipolar (BJT) - Single, Pre-Biased

3825 Предметы

Производитель, номер детали	Упаковка	Product Status	Transistor Type	Current - Collector (Ic) (Max)	Voltage - Collector Emitter Breakdown (Max)	Resistor - Base (R1)	Resistor - Emitter Base (R2)	DC Current Gain (hFE) (Min) @ Ic, Vce	Vce Saturation (Max) @ Ib, Ic	Current - Collector Cutoff (Max)	Frequency - Transition	Power - Max	Mounting Type	Package / Case	Supplier Device Package
BCR166 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	160 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR158WE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR196TE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR183WE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR142E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR141WH6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	NPN - Pre-Biased	100 mA	50 V	22 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	130 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR166E6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	160 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	PG-SOT23-3-11
BCR158W BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR166WE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR148WH6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	NPN - Pre-Biased	100 mA	50 V	47 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	100 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
BCR196WE6327 BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	70 mA	50 V	47 kOhms	22 kOhms	50 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	150 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
FJV4113RMTF 0.1A, 50V, PNP Fairchild Semiconductor	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	2.2 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
FJN4301RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	4.7 kOhms	20 @ 10mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
FJN4303RTA-ON 0.1A, 50V, PNP, TO-92 onsemi	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	22 kOhms	22 kOhms	56 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
PDTC114EE,115-NXP 0.1A, 50V, NPN, SC-75 NXP USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-
BCR166W BIPOLAR DIGITAL TRANSISTOR Infineon Technologies	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	70 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	160 MHz	250 mW	Surface Mount	SC-70, SOT-323	PG-SOT323-3
FJV4114RMTF 0.1A, 50V, PNP Fairchild Semiconductor	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	200 mW	Surface Mount	TO-236-3, SC-59, SOT-23-3	SOT-23-3
FJX3014RTF 0.1A, 50V, NPN Fairchild Semiconductor	Bulk	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	47 kOhms	68 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	200 mW	Surface Mount	SC-70, SOT-323	SC-70 (SOT323)
FJN4302RTA 0.1A, 50V, PNP, TO-92 Fairchild Semiconductor	Bulk	Active	PNP - Pre-Biased	100 mA	50 V	10 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	200 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3
FJN3305RTA 0.1A, 50V, NPN, TO-92 Fairchild Semiconductor	Bulk	Active	NPN - Pre-Biased	100 mA	50 V	4.7 kOhms	10 kOhms	30 @ 5mA, 5V	300mV @ 500µA, 10mA	100nA (ICBO)	250 MHz	300 mW	Through Hole	TO-226-3, TO-92-3 (TO-226AA) Formed Leads	TO-92-3