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| Производитель, номер детали | запрос цен | Ряд | Упаковка | Product Status | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Tube | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 337A (Tc) | 7.8mOhm @ 160A, 20V | 2.8V @ 4mA | 928nC @ 20V | 12.08pF @ 1000V | 1.409kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | ||
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NexFET™ | Tape & Reel (TR) | Active | 2 N-Channel (Dual) Common Drain | Standard | 12V | - | - | 1.25V @ 250µA | 10.9nC @ 4.5V | - | 2.3W | -55°C ~ 150°C (TJ) | Surface Mount | 6-XFBGA | 6-PicoStar | |
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NexFET™ | Tape & Reel (TR) | Active | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 5V Drive | 30V | 15A | 14.3mOhm @ 4A, 8V | 1.2V @ 250µA | 4.6nC @ 4.5V | 662pF @ 15V | 6W | 125°C (TJ) | Surface Mount | 8-PowerTDFN | 8-VSON (3.3x3.3) | |
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EPAD®, Zero Threshold™ | Tube | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | |
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EPAD®, Zero Threshold™ | Tube | Active | 2 N-Channel (Dual) Matched Pair | Logic Level Gate | 10.6V | 80mA | 14Ohm | 20mV @ 20µA | - | 30pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | |
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Tube | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | ||
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Tube | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 75Ohm @ 5V | 1V @ 10µA | - | - | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | ||
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EPAD®, Zero Threshold™ | Tube | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 20mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 16-SOIC | |
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EPAD®, Zero Threshold™ | Tube | Active | 2 N-Channel (Dual) Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | |
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Tube | Active | 2 P-Channel (Dual) Matched Pair | Standard | 10.6V | - | 270Ohm @ 5V | 1.2V @ 10µA | - | 10pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 8-PDIP | ||
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EPAD®, Zero Threshold™ | Tube | Active | 4 N-Channel, Matched Pair | Standard | 10.6V | - | 500Ohm @ 4V | 10mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | |
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EPAD®, Zero Threshold™ | Tube | Active | 4 N-Channel, Matched Pair | Logic Level Gate | 10.6V | 80mA | 25Ohm | 10mV @ 10µA | - | 15pF @ 5V | 500mW | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | |
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EPAD®, Zero Threshold™ | Tube | Active | 4 P-Channel, Matched Pair | Standard | 8V | - | - | 20mV @ 1µA | - | 2.5pF @ 5V | 500mW | 0°C ~ 70°C | Through Hole | 16-DIP (0.300", 7.62mm) | 16-PDIP | |
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Bulk | Active | 2 N-Channel (Half Bridge) | Standard | 500V | 90A | 45mOhm @ 45A, 10V | 5V @ 5mA | 246nC @ 10V | 11200pF @ 25V | 694W | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | SP4 | ||
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Tube | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 700V | 241A (Tc) | 9.5mOhm @ 80A, 20V | 2.4V @ 8mA | 430nC @ 20V | 9000pF @ 700V | 690W (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP3F | ||
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HiPerFET™ | Bulk | Active | 2 N-Channel (Dual) | Standard | 100V | 680A | 2.2mOhm @ 500A, 10V | 4V @ 30mA | 1440nC @ 10V | - | - | -40°C ~ 150°C (TJ) | Chassis Mount | Y3-Li | Y3-Li | |
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Tube | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18100pF @ 1kV | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI | ||
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Box | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 495A (Tc) | 5.2mOhm @ 240A, 20V | 2.8V @ 6mA | 1392nC @ 20V | 18.1pF @ 1000V | 2.031kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | D3 | ||
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Tube | Active | 6 N-Channel (3-Phase Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 251A (Tc) | 10.4mOhm @ 120A, 20V | 2.8V @ 3mA | 696nC @ 20V | 9060pF @ 1000V | 1.042kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6-P | ||
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Tube | Active | 2 N Channel (Phase Leg) | Silicon Carbide (SiC) | 1200V (1.2kV) | 805A (Tc) | 3.1mOhm @ 400A, 20V | 2.8V @ 10mA | 2320nC @ 20V | 30200pF @ 1kV | 3.215kW (Tc) | -40°C ~ 175°C (TJ) | Chassis Mount | Module | SP6C LI |