GoodChip

Transistors - FETs, MOSFETs - RF

3813 Предметы

Производитель, номер детали	Упаковка	Product Status	Transistor Type	Frequency	Gain	Voltage - Test	Current Rating (Amps)	Noise Figure	Current - Test	Power - Output	Voltage - Rated	Package / Case	Supplier Device Package
MRFE6VP5600HSR5 LATERAL N-CHANNEL BROADBAND RF P NXP USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
TM-30 TM-30 - 30W BROADBAND RF POWER G Ampleon USA Inc.	Tray	Obsolete	GaN HEMT	-	-	-	-	-	-	30W	-	-	-
CLF1G0035S-50 CLF1G0035S-50 - 50W BROADBAND RF Ampleon USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
MRF085HR5178 MRF085H - WIDEBAND RF POWER LDMO NXP Semiconductors	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
AFT26H250-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
BLF278C BLF278C - DUAL PUSH-PULL N-CHANN Rochester Electronics, LLC	Bulk	Obsolete	2 N-Channel (Dual) Common Source	-	18dB	50 V	2.5mA	-	200 mA	300W	125 V	SOT-262A1	CDFM4
CLF1G0035-50 CLF1G0035-50 - 50W BROADBAND RF Ampleon USA Inc.	Tray	Active	GaN HEMT	3GHz	11.5dB	50 V	-	-	150 mA	50W	150 V	SOT467C	SOT467C
A2T26H160-24SR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	Bulk	Active	LDMOS (Dual)	2.58GHz	15.5dB	28 V	-	-	350 mA	28W	65 V	NI-780S-4L2L	NI-780S-4L2L
MRFE6VP61K25NR6 WIDEBAND RF POWER LDMOS TRANSIST Freescale Semiconductor	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
MMRF1306HR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	Bulk	Active	LDMOS (Dual)	230MHz	24dB	50 V	-	-	100 mA	1250W	133 V	SOT-979A	NI-1230-4H
A2T21H360-24SR6 AIRFAST RF POWER LDMOS TRANSISTO NXP USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
SA2T18H450W19SR6 A2T18H450 - AIRFAST RF POWER LDM NXP Semiconductors	Bulk	Obsolete	LDMOS (Dual)	1.805GHz ~ 1.88GHz	16.6dB	30 V	10µA	-	800 mA	89W	65 V	NI-1230S-4S4S	NI-1230S-4S4S
MRF6VP3450HR5 LATERAL N-CHANNEL BROADBAND RF P NXP Semiconductors	Bulk	Obsolete	LDMOS (Dual), Common Source	470MHz ~ 860MHz	22.5dB	50 V	10µA	-	1.4 A	450W	110 V	NI-1230	NI-1230
A2T21H450W19SR6 A2T21H450W19 - AIRFAST RF POWER NXP Semiconductors	Bulk	Obsolete	LDMOS	2.11GHz ~ 2.2GHz	15.7dB	30 V	10µA	-	800 mA	89W	65 V	NI-1230S-4S4S	NI-1230S-4S4S
TM-100 TM-100 - 100W BROADBAND RF POWER Ampleon USA Inc.	Tray	Obsolete	GaN HEMT	-	-	-	-	-	-	100W	-	-	-
AFV09P350-04GNR3 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	Bulk	Active	LDMOS (Dual)	920MHz	19.5dB	48 V	-	-	860 mA	100W	105 V	OM-780G-4L	OM-780G-4L
CLF1G0035-100 CLF1G0035-100 - 100W BROADBAND R Rochester Electronics, LLC	Bulk	Obsolete	HEMT	3.5GHz	12dB	50 V	-	-	330 mA	100W	150 V	SOT-467C	SOT467C
CLF1G0035S-100P CLF1G0035S-100 - 100W BROADBAND Ampleon USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
MRF6VP11KHR5 RF POWER FIELD-EFFECT TRANSISTOR NXP USA Inc.	Bulk	Active	-	-	-	-	-	-	-	-	-	-	-
MRF6V14300HSR5 RF POWER FIELD-EFFECT TRANSISTOR Freescale Semiconductor	Bulk	Active	LDMOS	1.4GHz	18dB	50 V	-	-	150 mA	330W	100 V	NI-780S	NI-780S