GoodChip

Transistors - IGBTs - Single

4342 Предметы

Производитель, номер детали	Ряд	Упаковка	Product Status	IGBT Type	Voltage - Collector Emitter Breakdown (Max)	Current - Collector (Ic) (Max)	Current - Collector Pulsed (Icm)	Vce(on) (Max) @ Vge, Ic	Power - Max	Switching Energy	Input Type	Gate Charge	Td (on/off) @ 25°C	Test Condition	Reverse Recovery Time (trr)	Operating Temperature	Mounting Type	Package / Case	Supplier Device Package
IKU10N60RXK INSULATED GATE BIPOLAR TRANSISTO Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGD04N60BUMA1 SGD04N60 - FAST IGBT IN NPT-TECH Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKA08N65ET6XKSA1 HOME APPLIANCES 14 Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGB8207ABNT4G INSULATED GATE BIPOLAR TRANSISTO onsemi		Bulk	Active	-	365 V	20 A	50 A	2.2V @ 3.7V, 10A	165 W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
SKP02N60XKSA1 SKP02N60 - FAST IGBT IN NPT-TECH Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
NGB8204ANT4G INSULATED GATE BIPOLAR TRANSISTO onsemi		Bulk	Obsolete	-	430 V	18 A	50 A	2.5V @ 4V, 15A	115 W	-	Logic	-	-	-	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
FGPF4536 INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor		Bulk	Active	Trench	360 V	-	220 A	1.8V @ 15V, 50A	28.4 W	-	Standard	47 nC	-	-	-	-	Through Hole	TO-220-3 Full Pack	TO-220F-3
NGD8205ANT4G INSULATED GATE BIPOLAR TRANSISTO onsemi		Bulk	Obsolete	-	390 V	20 A	50 A	1.9V @ 4.5V, 20A	125 W	-	Logic	-	-/5µs	300V, 9A, 1kOhm, 5V	-	-55°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	TO-252, (D-Pak)
IRG4BC20SPBF IRG4BC20 - DISCRETE IGBT WITHOUT Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
SGB15N60HSATMA1 SGB15N60HS - HIGH SPEED IGBT IN Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IKD04N60RC2ATMA1 IKD04N60RC2ATMA1 Infineon Technologies	TrenchStop™	Tape & Reel (TR)	Active	Trench Field Stop	600 V	8 A	12 A	2.3V @ 15V, 4A	36.6 W	100µJ (on), 40µJ (off)	Standard	24 nC	4ns/90ns	400V, 4A, 49Ohm, 15V	80 ns	-40°C ~ 175°C (TJ)	Surface Mount	TO-252-3, DPak (2 Leads + Tab), SC-63	PG-TO252-3
NGB8206NTF4G INSULATED GATE BIPOLAR TRANSISTO onsemi		Bulk	Obsolete	-	390 V	20 A	-	1.9V @ 4.5V, 20A	150 W	-	Logic	-	-	-	-	-	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK
FGPF4565 INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor		Bulk	Active	Trench Field Stop	650 V	-	170 A	1.88V @ 15V, 30A	30 W	-	Standard	40.3 nC	11.2ns/40.8ns	400V, 30A, 5Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-220-3 Full Pack	TO-220F-3
IRGB4060DPBF IRGB4060 - DISCRETE IGBT WITH AN Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISL9V2040S3ST INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	EcoSPARK®	Bulk	Active	-	430 V	10 A	-	1.9V @ 4V, 6A	130 W	-	Logic	12 nC	-/3.64µs	300V, 1kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK (TO-263)
IRGS15B60KPBF IRGS15B60K - IGBT Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
IRG4BC30UPBF IRG4BC30 - DISCRETE IGBT WITHOUT Infineon Technologies		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-
ISL9V2540S3ST INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor	EcoSPARK®	Bulk	Active	-	430 V	15.5 A	-	1.8V @ 4V, 6A	166.7 W	-	Logic	15.1 nC	-/3.64µs	300V, 1kOhm, 5V	-	-40°C ~ 175°C (TJ)	Surface Mount	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB	D2PAK (TO-263)
SGF23N60UFTU INSULATED GATE BIPOLAR TRANSISTO Fairchild Semiconductor		Bulk	Active	-	600 V	23 A	92 A	2.6V @ 15V, 12A	75 W	115µJ (on), 135µJ (off)	Standard	-	17ns/60ns	300V, 12A, 23Ohm, 15V	-	-55°C ~ 150°C (TJ)	Through Hole	TO-3P-3 Full Pack	TO-3PF
ISL9V3036S3ST_SB82029A IGBT, 360V, 17A, 1.58V, 300MJ, D Fairchild Semiconductor		Bulk	Active	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-	-