HGT1S12N60B3DS

HGT1S12N60B3DS

Images are for reference only
See Product Specifications

HGT1S12N60B3DS
Описание:
27A, 600V, UFS N-CHANNEL IGBT W/
Упаковка:
Bulk
Datasheet:
HGT1S12N60B3DS Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:HGT1S12N60B3DS
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):9b63fe166715207d51445c226ada9c46
Current - Collector (Ic) (Max):3adaddac66a42dca9036bdf0f2ed521e
Current - Collector Pulsed (Icm):df600782fcc2e59705e93a461ee16edd
Vce(on) (Max) @ Vge, Ic:6eb0e1d6ebfbe56e0944a3b205290da2
Power - Max:7e7162664ef337f75a21b178aedca6ea
Switching Energy:78c72997f6feeab37d62084226b8e757
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:4877082100e2ce095056ece537f000fc
Td (on/off) @ 25°C:dae5d93b68e0063daafce053684892b1
Test Condition:370f041c2f5079b105950a8dd2c17b68
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Package / Case:99446f4470b43888d0c78d7d2cdfc956
Supplier Device Package:ca9050860f61b7f156a477795e7299d5
In Stock: 1100
Stock:
1100 Can Ship Immediately
  • Делиться:
Для использования с
AOT10B65M1
AOT10B65M1
Alpha & Omega Semiconductor Inc.
IGBT 650V 10A TO220
IXXH30N60C3
IXXH30N60C3
IXYS
DISC IGBT XPT-GENX3 TO-247AD
DGTD65T50S1PT
DGTD65T50S1PT
Diodes Incorporated
IGBT 600V-X TO247 TUBE 0.45K
SGP23N60UFTU
SGP23N60UFTU
onsemi
IGBT 600V 23A TO220-3
IRGI4061DPBF
IRGI4061DPBF
Infineon Technologies
IGBT 600V 20A 43W TO220FP
IXGX120N60B3
IXGX120N60B3
IXYS
IGBT 600V 280A 780W PLUS247
IRGP4069PBF
IRGP4069PBF
Infineon Technologies
IGBT 600V 76A 268W TO247AC
IGW30N100TFKSA1
IGW30N100TFKSA1
Infineon Technologies
IGBT 1000V 60A 412W TO247-3
IRGB4715DPBF
IRGB4715DPBF
Infineon Technologies
IGBT 650V TO-220AB
IGC11T120T8LX1SA1
IGC11T120T8LX1SA1
Infineon Technologies
IGBT 1200V 8A SAWN ON FOIL
IRG7CH73UEF-R
IRG7CH73UEF-R
Infineon Technologies
IGBT 1200V ULTRA FAST DIE
NGTD28T65F2SWK
NGTD28T65F2SWK
onsemi
IGBT TRENCH FIELD STOP 650V DIE
Вас также может заинтересовать
RF1S50N06LESM
RF1S50N06LESM
Harris Corporation
N-CHANNEL POWER MOSFET
RFP14N06L
RFP14N06L
Harris Corporation
N-CHANNEL POWER MOSFET
LM555N
LM555N
Harris Corporation
TIMER FOR TIMING DELAYS
ICM7228CIJI
ICM7228CIJI
Harris Corporation
ICM7228 8-DIGIT, MICROPROCESSOR-
ICL7621DMTV
ICL7621DMTV
Harris Corporation
IC CMOS 2 CIRCUIT TO99-8
CA3130EX
CA3130EX
Harris Corporation
IC CMOS 1 CIRCUIT 8DIP
HA7-5020-9
HA7-5020-9
Harris Corporation
CURRENT FEEDBACK VIDEO AMPLIFIER
CD74FCT574CTQM
CD74FCT574CTQM
Harris Corporation
FAST OCTAL D REGISTER
CD74HCT32M96
CD74HCT32M96
Harris Corporation
IC GATE OR 4CH 2-INP 14SOIC
CD74HC30E
CD74HC30E
Harris Corporation
IC GATE NAND 1CH 8-INP 14DIP
CD74FCT2841ATQM
CD74FCT2841ATQM
Harris Corporation
FAST CMOS BUS INTERFACE LATCH
MWS5101AEL3
MWS5101AEL3
Harris Corporation
256X4-BIT STANDARD SRAM