APT70GR65B2SCD30

APT70GR65B2SCD30

Images are for reference only
See Product Specifications

APT70GR65B2SCD30
Описание:
INSULATED GATE BIPOLAR TRANSISTO
Упаковка:
Bulk
Datasheet:
APT70GR65B2SCD30 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:APT70GR65B2SCD30
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:Microsemi Corporation
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
IGBT Type:2e86438e971de59fdacd9db11a83b0fc
Voltage - Collector Emitter Breakdown (Max):347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):34c252074335bc44b4399f3923fbde1d
Current - Collector Pulsed (Icm):f7320e647bd28427900c2c245c488f1f
Vce(on) (Max) @ Vge, Ic:24db9a03e2b687d9daa9a4a0d21cdef6
Power - Max:4d0248d997f3b7334209812d43199261
Switching Energy:336d5ebc5436534e61d16e63ddfca327
Input Type:336d5ebc5436534e61d16e63ddfca327
Gate Charge:f64535c8d9b29adeeb47bf23ed969b17
Td (on/off) @ 25°C:6398ff53654e110e41963124f87e9e2a
Test Condition:cf3075fe97b0465500aef4cf0c1b95b6
Reverse Recovery Time (trr):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:506558024381a3c368cb88e9e94f6845
Package / Case:748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:967506cdc5b53ce091625ce457e753ec
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
HGT1S10N120BNST
HGT1S10N120BNST
onsemi
IGBT 1200V 35A 298W TO263AB
IKP06N60TXKSA1
IKP06N60TXKSA1
Infineon Technologies
IGBT 600V 12A 88W TO220-3
IKW50N65EH5XKSA1
IKW50N65EH5XKSA1
Infineon Technologies
IGBT TRENCH 650V 80A TO247-3
IXYH40N90C3
IXYH40N90C3
IXYS
IGBT 900V 105A 600W TO247
IKZ75N65NH5
IKZ75N65NH5
Infineon Technologies
IKZ75N65 - DISCRETE IGBT WITH AN
IRG4RC10KTR
IRG4RC10KTR
Infineon Technologies
IGBT 600V 9A 38W DPAK
IXSK40N60CD1
IXSK40N60CD1
IXYS
IGBT 600V 75A 280W TO264
GT60N321(Q)
GT60N321(Q)
Toshiba Semiconductor and Storage
IGBT 1000V 60A 170W TO3P LH
IHW25N120R2FKSA1
IHW25N120R2FKSA1
Infineon Technologies
IGBT 1200V 50A 365W TO247-3
RJH60D7ADPK-00#T0
RJH60D7ADPK-00#T0
Renesas Electronics America Inc
IGBT 600V 90A 300W TO-3P
SIGC10T60EX1SA3
SIGC10T60EX1SA3
Infineon Technologies
IGBT 3 CHIP 600V 20A WAFER
SIGC14T60NCX7SA1
SIGC14T60NCX7SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
Вас также может заинтересовать
SMCG6057A/TR13
SMCG6057A/TR13
Microsemi Corporation
TVS DIODE 47VWM 77VC DO215AB
MXLP5KE51CAE3
MXLP5KE51CAE3
Microsemi Corporation
TVS DIODE 51VWM 82.4VC DO204AL
MXLPLAD7.5KP54CA
MXLPLAD7.5KP54CA
Microsemi Corporation
TVS DIODE
2EZ4.3D2/TR12
2EZ4.3D2/TR12
Microsemi Corporation
DIODE ZENER 4.3V 2W DO204AL
2EZ6.8D2E3/TR12
2EZ6.8D2E3/TR12
Microsemi Corporation
DIODE ZENER 6.8V 2W DO204AL
SMBJ4743C/TR13
SMBJ4743C/TR13
Microsemi Corporation
DIODE ZENER 13V 2W SMBJ
SMBJ4753C/TR13
SMBJ4753C/TR13
Microsemi Corporation
DIODE ZENER 36V 2W SMBJ
2EZ22D5/TR8
2EZ22D5/TR8
Microsemi Corporation
DIODE ZENER 22V 2W DO204AL
1N5221B (DO-35)
1N5221B (DO-35)
Microsemi Corporation
DIODE ZENER 24V 500MW DO35
APT47N65BC3G
APT47N65BC3G
Microsemi Corporation
MOSFET N-CH 650V 47A TO247
APT8075BN
APT8075BN
Microsemi Corporation
MOSFET N-CH 800V 13A TO247AD
APTGT100SK120D1G
APTGT100SK120D1G
Microsemi Corporation
IGBT MODULE 1200V 150A 520W D1