RFD8P06E

RFD8P06E

Images are for reference only
See Product Specifications

RFD8P06E
Описание:
P-CHANNEL POWER MOSFET
Упаковка:
Bulk
Datasheet:
RFD8P06E Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:RFD8P06E
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Harris Corporation
Упаковка:Bulk
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:336d5ebc5436534e61d16e63ddfca327
Technology:336d5ebc5436534e61d16e63ddfca327
Drain to Source Voltage (Vdss):336d5ebc5436534e61d16e63ddfca327
Current - Continuous Drain (Id) @ 25°C:336d5ebc5436534e61d16e63ddfca327
Drive Voltage (Max Rds On, Min Rds On):336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs(th) (Max) @ Id:336d5ebc5436534e61d16e63ddfca327
Gate Charge (Qg) (Max) @ Vgs:336d5ebc5436534e61d16e63ddfca327
Vgs (Max):336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:336d5ebc5436534e61d16e63ddfca327
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:336d5ebc5436534e61d16e63ddfca327
Mounting Type:336d5ebc5436534e61d16e63ddfca327
Supplier Device Package:336d5ebc5436534e61d16e63ddfca327
Package / Case:336d5ebc5436534e61d16e63ddfca327
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
PSMN3R3-80BS,118
PSMN3R3-80BS,118
Nexperia USA Inc.
MOSFET N-CH 80V 120A D2PAK
IXTA3N100D2HV
IXTA3N100D2HV
IXYS
MOSFET N-CH 1000V 3A TO263HV
IXFB210N30P3
IXFB210N30P3
IXYS
MOSFET N-CH 300V 210A PLUS264
IXFH70N20Q3
IXFH70N20Q3
IXYS
MOSFET N-CH 200V 70A TO247AD
IXFK50N85X
IXFK50N85X
IXYS
MOSFET N-CH 850V 50A TO264
TK7A65W,S5X
TK7A65W,S5X
Toshiba Semiconductor and Storage
MOSFET N-CH 650V 6.8A TO220SIS
IRFI624G
IRFI624G
Vishay Siliconix
MOSFET N-CH 250V 3.4A TO220-3
ZVN4306GVTC
ZVN4306GVTC
Diodes Incorporated
MOSFET N-CH 60V 2.1A SOT223
BSP135 E6906
BSP135 E6906
Infineon Technologies
MOSFET N-CH 600V 120MA SOT223-4
IXFK32N50Q
IXFK32N50Q
IXYS
MOSFET N-CH 500V 32A TO264AA
SIR808DP-T1-GE3
SIR808DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 25V 20A PPAK SO-8
PH1875L,115
PH1875L,115
NXP USA Inc.
MOSFET N-CH 75V 45.8A LFPAK56
Вас также может заинтересовать
RHRU10050
RHRU10050
Harris Corporation
RECTIFIER DIODE
HUF7554S3S
HUF7554S3S
Harris Corporation
HUF755453S - 75A, 80V, 0.010 OHM
IRF214
IRF214
Harris Corporation
IRF214
DG301ACK
DG301ACK
Harris Corporation
TTL-COMPATIBLE ANALOG SWITCH
HIN202CBN-T
HIN202CBN-T
Harris Corporation
IC TRANSCEIVER FULL 2/2 16SOIC
CA3440T
CA3440T
Harris Corporation
IC OPAMP GP 1 CIRCUIT TO99-8
HA2-2510-8
HA2-2510-8
Harris Corporation
IC OPAMP GP 1 CIRCUIT TO99-8
SK3556
SK3556
Harris Corporation
IC OPAMP GP 2 CIRCUIT 14DIP
CD74FCT162646ATSM
CD74FCT162646ATSM
Harris Corporation
FAST 16-BIT REGISTERED TRANSCVR
HD3-6436-9
HD3-6436-9
Harris Corporation
CMOS OCTAL BUS BUFFER/DRIVER
CD74FCT162Q244ATMT
CD74FCT162Q244ATMT
Harris Corporation
QUAD 4-BIT DRIVER
RCH10N50A
RCH10N50A
Harris Corporation
RCH10N50A