IXTA3N100D2HV

IXTA3N100D2HV

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IXTA3N100D2HV
Mfr.:
Описание:
MOSFET N-CH 1000V 3A TO263HV
Упаковка:
Tube
Datasheet:
IXTA3N100D2HV Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXTA3N100D2HV
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):b912e8e9b12311ef3cd41c0d58a8ccc8
Current - Continuous Drain (Id) @ 25°C:5d76e9f8c6f5fafcb189eed9d7460c31
Drive Voltage (Max Rds On, Min Rds On):69cb45889f120bbb280b175f3d60f880
Rds On (Max) @ Id, Vgs:06acdf1e53088ac7993b0d37179efbe8
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:bfd142fd508b42f50a0e2aa02e34b286
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:cc82f7c1ae256560d04e2207ccaba104
FET Feature:5a3cf4f27c5777db8b571ca4dff46f99
Power Dissipation (Max):9ab21596dbbd1fdf7a3f4aba0a4832ee
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:61403be9cf2d8096847d5dfa2b7dbb75
Package / Case:99446f4470b43888d0c78d7d2cdfc956
In Stock: 0
Stock:
0 Can Ship Immediately
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