IXXN200N65A4

IXXN200N65A4

Images are for reference only
See Product Specifications

IXXN200N65A4
Mfr.:
Описание:
IGBT
Упаковка:
Tube
Datasheet:
IXXN200N65A4 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:IXXN200N65A4
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - IGBTs - Single
Производитель:IXYS
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):347f255197950e6b02089b73b6a8acdd
Current - Collector (Ic) (Max):2926cbc0963b2941e76a7247e2d91c9e
Current - Collector Pulsed (Icm):e07fc1a98469dc8d5763b0f3560b67ce
Vce(on) (Max) @ Vge, Ic:0fbd14dad7151f641862e1eeb10cb2bc
Power - Max:52cb2565ca276c6f2200869ad2fa418d
Switching Energy:bace8945fe96266f2c94a8dc98c0c409
Input Type:eb6d8ae6f20283755b339c0dc273988b
Gate Charge:f773377e7773aa26353efbf26092b6c9
Td (on/off) @ 25°C:3af390dc95095b6e37f2509d497266a8
Test Condition:a34b9842be827d6a2d45626e9fc5fb5d
Reverse Recovery Time (trr):7bc4b0c3a7f2322dd39dd96788ce212f
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:678457b2fd6f368ccd41b6654ad866df
Package / Case:cafcaadef55a90fa9f519d3abd68cad9
Supplier Device Package:2f82987a26190c22229f459d19dc6592
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
IXA20RG1200DHG-TUB
IXA20RG1200DHG-TUB
IXYS
IGBT 1200V 32A 125W SMPD
IKW30N60T
IKW30N60T
Infineon Technologies
IKW30N60 - DISCRETE IGBT WITH AN
FGH40N60SFDTU-F085
FGH40N60SFDTU-F085
Fairchild Semiconductor
INSULATED GATE BIPOLAR TRANSISTO
IXGP20N120BD1
IXGP20N120BD1
IXYS
IGBT 1200V 40A 190W TO220
FGA50N100BNTD2
FGA50N100BNTD2
onsemi
IGBT 1000V 50A 156W TO3P
IXGP4N100
IXGP4N100
IXYS
IGBT 1000V 8A 40W TO220AB
IXGF30N400
IXGF30N400
IXYS
IGBT 4000V 30A 160W I4-PAK
IRG8P60N120KDPBF
IRG8P60N120KDPBF
Infineon Technologies
IGBT 1200V 100A 420W TO-247AC
IXBL20N300C
IXBL20N300C
IXYS
IGBT 3000V
IGC41T120T8QX7SA2
IGC41T120T8QX7SA2
Infineon Technologies
IGBT 1200V 40A DIE
SIGC18T60NCX1SA1
SIGC18T60NCX1SA1
Infineon Technologies
IGBT 3 CHIP 600V WAFER
RGW40TK65DGVC11
RGW40TK65DGVC11
Rohm Semiconductor
HIGH-SPEED FAST SWITCHING TYPE,
Вас также может заинтересовать
DSA50C150HB
DSA50C150HB
IXYS
DIODE ARRAY SCHOTTKY 150V TO247
DSS20-0015B
DSS20-0015B
IXYS
DIODE SCHOTTKY 15V 20A TO220AC
DSA15IM200UC-TRL
DSA15IM200UC-TRL
IXYS
DIODE SCHOTTKY 200V 15A TO252
K2325TJ600
K2325TJ600
IXYS
SCR 6KV 4625A W81
IXTH16N50D2
IXTH16N50D2
IXYS
MOSFET N-CH 500V 16A TO247-3
IXTH110N25T
IXTH110N25T
IXYS
MOSFET N-CH 250V 110A TO247
IXFX78N50P3
IXFX78N50P3
IXYS
MOSFET N-CH 500V 78A PLUS247-3
IXFV22N50PS
IXFV22N50PS
IXYS
MOSFET N-CH 500V 22A PLUS-220SMD
IXTQ88N15
IXTQ88N15
IXYS
MOSFET N-CH 150V 88A TO3P
IXFT88N28P
IXFT88N28P
IXYS
MOSFET N-CH 280V 88A TO268
IXBF50N360
IXBF50N360
IXYS
IGBT 3600V 70A 290W I4-PAK
IXDD414SI
IXDD414SI
IXYS
IC GATE DRVR LOW-SIDE 14SOIC