GT20N135SRA,S1E

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See Product Specifications

Mfr. #:

GT20N135SRA,S1E

Mfr.:

Toshiba Semiconductor and Storage

Описание:

D-IGBT TO-247 VCES=1350V IC=40A

Упаковка:

Tube

Datasheet:

GT20N135SRA,S1E Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	GT20N135SRA,S1E
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - IGBTs - Single
Производитель:	Toshiba Semiconductor and Storage
Упаковка:	Tube
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
IGBT Type:	336d5ebc5436534e61d16e63ddfca327
Voltage - Collector Emitter Breakdown (Max):	7bea4b6d3fd0ae73d2f5ecabf98ee369
Current - Collector (Ic) (Max):	581e296bcea74c29498390ed7d157f7a
Current - Collector Pulsed (Icm):	27fcc57db427c5f2eb0181db009b3f69
Vce(on) (Max) @ Vge, Ic:	e07af0a85beba576e8935e6bad00bba6
Power - Max:	d923ede1a82c1e9041d1cbf5d22c6c6f
Switching Energy:	d001e732ec14d7bd5a11917278359418
Input Type:	eb6d8ae6f20283755b339c0dc273988b
Gate Charge:	a1fdd948f5157d6a6403c8e166317c14
Td (on/off) @ 25°C:	336d5ebc5436534e61d16e63ddfca327
Test Condition:	4c05404a6585fb8ca29bc85d7c9c2924
Reverse Recovery Time (trr):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	dfb4ad46e1ac805451b8f397e97630b4
Mounting Type:	506558024381a3c368cb88e9e94f6845
Package / Case:	748a8539a6c3c7dbdb455218c72fac40
Supplier Device Package:	566bc0f44c33782e0104763798b071ab