2N7002E-7-F-79

2N7002E-7-F-79

Images are for reference only
See Product Specifications

2N7002E-7-F-79
Описание:
DIODE
Упаковка:
Bulk
Datasheet:
2N7002E-7-F-79 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:2N7002E-7-F-79
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Bulk
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:4372038dee8fa3554f5e4160a67c0d8b
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:7218fe7dc67cf41438bd985a73e9029e
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:ad3097d4aa8f132bd548f4c76fc27623
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e1a94785e7688bef5fd2c077d038781f
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):9dc94c6c05f3d192e2e94e3c379447a1
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:581cdcc7e1a235fe3e919028055e9e50
Package / Case:51bf93173785f0f3fc2d8b70cf119689
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
ISS55EP06LMXTSA1
ISS55EP06LMXTSA1
Infineon Technologies
MOSFET P-CH 60V 180MA SOT23-3
DMP1011UCB9-7
DMP1011UCB9-7
Diodes Incorporated
MOSFET P-CH 8V 10A U-WLB1515-9
RJK03E0DNS-00#J5
RJK03E0DNS-00#J5
Renesas Electronics America Inc
POWER FIELD-EFFECT TRANSISTOR
HUFA76633S3S
HUFA76633S3S
Fairchild Semiconductor
MOSFET N-CH 100V 39A D2PAK
STL4LN80K5
STL4LN80K5
STMicroelectronics
MOSFET N-CH 800V 3A PWRFLAT VHV
IRF1010EL
IRF1010EL
Infineon Technologies
MOSFET N-CH 60V 84A TO262
STP180N55F3
STP180N55F3
STMicroelectronics
MOSFET N-CH 55V 120A TO220AB
NTMFS4122NT1G
NTMFS4122NT1G
onsemi
MOSFET N-CH 30V 9.1A 5DFN
MTM232270LBF
MTM232270LBF
Panasonic Electronic Components
MOSFET N CH 20V 2A SMINI3-G1-B
NVATS5A304PLZT4G
NVATS5A304PLZT4G
onsemi
MOSFET P-CHANNEL 60V 120A ATPAK
TSM4N80CI C0G
TSM4N80CI C0G
Taiwan Semiconductor Corporation
MOSFET N-CH 800V 4A ITO220AB
IPC60R160C6UNSAWNX6SA1
IPC60R160C6UNSAWNX6SA1
Infineon Technologies
MOSFET N-CH BARE DIE
Вас также может заинтересовать
D5V0F1U2LPQ-7B
D5V0F1U2LPQ-7B
Diodes Incorporated
TVS DIODE 5.5VWM 12VC DFN1006-2
SMAJ6.5A-13-F
SMAJ6.5A-13-F
Diodes Incorporated
TVS DIODE 6.5VWM 11.2VC SMA
1.5KE51CA-T
1.5KE51CA-T
Diodes Incorporated
TVS DIODE 43.6VWM 70.1VC DO201
F80810002
F80810002
Diodes Incorporated
CRYSTAL CERAMIC GLASS8045 T&R 1K
FD4000133
FD4000133
Diodes Incorporated
XTAL OSC XO 40.0000MHZ CMOS SMD
FN6250024
FN6250024
Diodes Incorporated
XTAL OSC XO 62.5000MHZ CMOS
FD3330019
FD3330019
Diodes Incorporated
XTAL OSC XO 33.3333MHZ CMOS SMD
PDC500001
PDC500001
Diodes Incorporated
XTAL OSC XO 125.0000MHZ PECL SMD
DMG301NU-7
DMG301NU-7
Diodes Incorporated
MOSFET N-CH 25V 260MA SOT23
DMT12H065LFDF-13
DMT12H065LFDF-13
Diodes Incorporated
MOSFET N-CH 115V 4.3A 6UDFN
ZRC250A03STOA
ZRC250A03STOA
Diodes Incorporated
IC VREF SHUNT 3% TO92
AP5102-FNG-7
AP5102-FNG-7
Diodes Incorporated
IC REG BUCK