DMG4N60SK3-13

DMG4N60SK3-13

Images are for reference only
See Product Specifications

DMG4N60SK3-13
Описание:
MOSFET N-CH 600V 3.7A TO252 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
DMG4N60SK3-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMG4N60SK3-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:ec30c235d0eb792797af1aa1d11759a7
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):9b63fe166715207d51445c226ada9c46
Current - Continuous Drain (Id) @ 25°C:60c279b05ee295abd891b938ff6b1329
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:06567b58cecb167b3220cef1f066a7b3
Vgs(th) (Max) @ Id:63ae2c6ac5292648558e227400623846
Gate Charge (Qg) (Max) @ Vgs:3603efb733f31577392dc2a818cc61f7
Vgs (Max):972af1bbf385e6f2ec41d2be6228bd7e
Input Capacitance (Ciss) (Max) @ Vds:976b002f421752055497b15749240f28
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):1b874fcde888fb452082d0f6c7ef7573
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:baaef3a909048a395926fdc0e4caa737
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
DMN3730U-7
DMN3730U-7
Diodes Incorporated
MOSFET N-CH 30V 750MA SOT23
RJK03C9DNS-00#J5
RJK03C9DNS-00#J5
Renesas Electronics America Inc
POWER MOSFET
IPI60R250CP
IPI60R250CP
Infineon Technologies
COOLMOS N-CHANNEL POWER MOSFET
BSZ42DN25NS3GATMA1
BSZ42DN25NS3GATMA1
Infineon Technologies
MOSFET N-CH 250V 5A TSDSON-8
TK100E06N1,S1X
TK100E06N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 60V 100A TO-220
NTMFS4C025NT1G
NTMFS4C025NT1G
onsemi
MOSFET N-CH 30V 20A/69A 5DFN
NVTFS4C08NWFTAG
NVTFS4C08NWFTAG
onsemi
MOSFET N-CH 30V 17A 8WDFN
IXTC220N075T
IXTC220N075T
IXYS
MOSFET N-CH 75V 115A ISOPLUS220
FQD2N80TM_WS
FQD2N80TM_WS
onsemi
MOSFET N-CH 800V 1.8A DPAK
GA100JT17-227
GA100JT17-227
GeneSiC Semiconductor
TRANS SJT 1700V 160A SOT227
BUK6Y25-40PX
BUK6Y25-40PX
Nexperia USA Inc.
MOSFET P-CH 40V 38A LFPAK56
PHX23NQ11T,127
PHX23NQ11T,127
NXP USA Inc.
MOSFET N-CH 110V 16A TO220F
Вас также может заинтересовать
FP1100003
FP1100003
Diodes Incorporated
CRYSTAL SURFACE MOUNT
FN0230001
FN0230001
Diodes Incorporated
XTAL OSC XO 2.3400MHZ CMOS SMD
BAS70BRW-7-F
BAS70BRW-7-F
Diodes Incorporated
DIODE ARRAY SCHOTTKY 70V SOT363
SDT20100CTB-13
SDT20100CTB-13
Diodes Incorporated
DIODE SCHOTTKY 100V 10A TO263AB
DL4006-13-F
DL4006-13-F
Diodes Incorporated
DIODE GEN PURP 800V 1A MELF
BCX5616QTC
BCX5616QTC
Diodes Incorporated
PWR MID PERF TRANSISTOR SOT89 T&
DDTA143FUA-7
DDTA143FUA-7
Diodes Incorporated
TRANS PREBIAS PNP 200MW SOT323
DMN3071LFR4-7R
DMN3071LFR4-7R
Diodes Incorporated
MOSFET N-CH 30V 3.4A 3DFN
2N7002KX-7
2N7002KX-7
Diodes Incorporated
MOSFET N-CH 60V SOT23-3
PI6C2409-1LIE
PI6C2409-1LIE
Diodes Incorporated
IC ZERO DELAY CLOCK BUFF 16SOIC
74LV32AS14-13
74LV32AS14-13
Diodes Incorporated
IC GATE OR 4CH 2-INP 14SO
AP9101CAK6-BWTRG1
AP9101CAK6-BWTRG1
Diodes Incorporated
IC BATT PROT LI-ION 1CELL SOT26