TSM080NB03CR RLG

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See Product Specifications

Mfr. #:

TSM080NB03CR RLG

Mfr.:

Taiwan Semiconductor Corporation

Описание:

MOSFET N-CH 30V 14A/59A 8PDFN

Упаковка:

Tape & Reel (TR)

Datasheet:

TSM080NB03CR RLG Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	TSM080NB03CR RLG
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Taiwan Semiconductor Corporation
Упаковка:	Tape & Reel (TR)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	6f065265b5ad79aa8b78335bb14c6420
Current - Continuous Drain (Id) @ 25°C:	1e119cd7a1d10bb4fc0b2f7d692a16ea
Drive Voltage (Max Rds On, Min Rds On):	214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:	9cb6edf2cc748b5383a95d1ada28c16b
Vgs(th) (Max) @ Id:	bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:	0dd58e464fbd9aa4ecb11445a1cff0fc
Vgs (Max):	ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:	3db8db4182295bcf40eda17d01d7ded6
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	e6db6dd3a85a02a094467cb937f25635
Operating Temperature:	57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	85804fba97d67c7de29f828b662181f9
Package / Case:	7f82de9f5c66f9f803bc2f6ee2b90c1b