DMN2011UFDE-13

DMN2011UFDE-13

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DMN2011UFDE-13
Описание:
MOSFET N-CH 20V 11.7A 6UDFN
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2011UFDE-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2011UFDE-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:35c859b365b6e2fcf9c373bf15c6d74e
Drive Voltage (Max Rds On, Min Rds On):c20b0e732e8e50ac667a2996b676523a
Rds On (Max) @ Id, Vgs:2a759f59b0b76312bc06b7b236277afe
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:05d74e9e726d971ac2a0db481f2a376d
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:b6e6d90e0ebdb0312c3ec5500fa988c3
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c650d5ad59c0e9593886d78ad73a8522
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:0d1a653ddda3c806452bfe0c6f3af0f3
Package / Case:e81d8b9cfb71d523a4585d1e856b85a6
In Stock: 0
Stock:
0 Can Ship Immediately
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