DMN2710UTQ-13

DMN2710UTQ-13

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DMN2710UTQ-13
Описание:
MOSFET BVDSS: 8V~24V SOT523 T&R
Упаковка:
Tape & Reel (TR)
Datasheet:
DMN2710UTQ-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMN2710UTQ-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:a4521eb9cff0ac4b1ca27bad34e19383
Drive Voltage (Max Rds On, Min Rds On):72f93dd3e24aa2b695818cce6ee9270b
Rds On (Max) @ Id, Vgs:0a583a32ea6bc2cd55baa24252b83a44
Vgs(th) (Max) @ Id:fb74aa2ff10bb77cff79f565b135beed
Gate Charge (Qg) (Max) @ Vgs:80ad1aa0e158b71b36911975e4791ede
Vgs (Max):f5c4cca94723a2caec8107440f9ccaee
Input Capacitance (Ciss) (Max) @ Vds:03ec24df2464d680c193aae708066d08
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):0a867c70497cf2fc8dc05adb4a73db97
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:a3aeb12e681ccde3b9a11bc7ce332447
Package / Case:a3aeb12e681ccde3b9a11bc7ce332447
In Stock: 0
Stock:
0 Can Ship Immediately
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