DMNH10H028SK3-13

DMNH10H028SK3-13

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DMNH10H028SK3-13
Описание:
MOSFET N-CH 100V 55A TO252
Упаковка:
Tape & Reel (TR)
Datasheet:
DMNH10H028SK3-13 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMNH10H028SK3-13
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:3d284ad1d0f0a43686c28bd19bcce773
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:b2bf957b20f017462baf6ffc19456ecf
Vgs(th) (Max) @ Id:9e2e6f51fb70850599d15861dbc57221
Gate Charge (Qg) (Max) @ Vgs:95e0121b2594331d2019c4eaadbc1cae
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:3593f5be5800f5c920a6175cd41e1156
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:baaef3a909048a395926fdc0e4caa737
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
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