DMT10H072LFDFQ-7

DMT10H072LFDFQ-7

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See Product Specifications

DMT10H072LFDFQ-7
Описание:
MOSFET N-CH 100V 4A 6UDFN
Упаковка:
Tape & Reel (TR)
Datasheet:
DMT10H072LFDFQ-7 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:DMT10H072LFDFQ-7
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Diodes Incorporated
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:0fef84355726c5ae6e53a5fd06d60e2d
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:8c6fb09dbf2f8feb415c9f45fbb1eb66
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:0559ef2025bc3f34db7de3401e77c0f5
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:e4322901530fb54cb351a33de5b87a44
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):5676c7a9d1d4023a4122ba49c6c85fd5
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:8b3144cb99867de9bb5a66e89f8a3174
Package / Case:c6d18f5cddfd33aab8c271dd5756afd6
In Stock: 2298
Stock:
2298 Can Ship Immediately
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