VN10LPSTZ

Images are for reference only
See Product Specifications

Mfr. #:

VN10LPSTZ

Mfr.:

Diodes Incorporated

Описание:

MOSFET VMOS N-CHAN TO92-3

Упаковка:

Tape & Box (TB)

Datasheet:

VN10LPSTZ Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	VN10LPSTZ
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	Diodes Incorporated
Упаковка:	Tape & Box (TB)
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):	5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:	30caef35e9f0ab093116ca69e4a5b034
Drive Voltage (Max Rds On, Min Rds On):	336d5ebc5436534e61d16e63ddfca327
Rds On (Max) @ Id, Vgs:	34a3446f9b31bf5ce58bed7aee129229
Vgs(th) (Max) @ Id:	a7c6093f80ca0dfc858bc53da7afe406
Gate Charge (Qg) (Max) @ Vgs:	336d5ebc5436534e61d16e63ddfca327
Vgs (Max):	336d5ebc5436534e61d16e63ddfca327
Input Capacitance (Ciss) (Max) @ Vds:	9599881b19ba103e54af4d61275d0e39
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	336d5ebc5436534e61d16e63ddfca327
Mounting Type:	506558024381a3c368cb88e9e94f6845
Supplier Device Package:	cf4262f41fb920c2d61ea1db6751dca3
Package / Case:	27b362bb7c2c3a5c4f20d6818bb464fe