FBG10N30BC

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See Product Specifications

Mfr. #:

FBG10N30BC

Mfr.:

EPC Space, LLC

Описание:

GAN FET HEMT100V30A COTS 4FSMD-B

Упаковка:

Tray

Datasheet:

FBG10N30BC Datasheet (PDF)

ECAD-модель:

Атрибуты продукта

номер части:	FBG10N30BC
Категория:	Discrete Semiconductor Products
Подкатегория:	Transistors - FETs, MOSFETs - Single
Производитель:	EPC Space, LLC
Упаковка:	Tray
Product Status:	4d3d769b812b6faa6b76e1a8abaece2d
FET Type:	43272ae8a787f198ca6b6227abc259ef
Technology:	35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):	227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:	b5a4f17035c9cf549f5adf4038dff86d
Drive Voltage (Max Rds On, Min Rds On):	ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:	d8accb37bc073613ae91978d1fd10df4
Vgs(th) (Max) @ Id:	e6bf256823e0885f351daefa3f6b23cd
Gate Charge (Qg) (Max) @ Vgs:	dae50399dc9b1427b57801e0646fabee
Vgs (Max):	fb9ca950a6cec256edf558a59624ceb2
Input Capacitance (Ciss) (Max) @ Vds:	5653d766cc524cf799bbdcb2c7756b6e
FET Feature:	336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):	336d5ebc5436534e61d16e63ddfca327
Operating Temperature:	6a357bb51737d359c8bcaa66995aadb4
Mounting Type:	6277abee52798fa9d158f75ff84dd873
Supplier Device Package:	ebbbdba75ac7945b21b33e0255471fd4
Package / Case:	db45ecf850e0e2c14cc38f99477b2c9c