EPC2016C

EPC2016C

Images are for reference only
See Product Specifications

EPC2016C
Mfr.:
Описание:
GANFET N-CH 100V 18A DIE
Упаковка:
Tape & Reel (TR)
Datasheet:
EPC2016C Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:EPC2016C
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:EPC
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:35eb69956e740ed144b8581a71bf6973
Drain to Source Voltage (Vdss):227b5c7c7a2ed2ea3da210ed0860030d
Current - Continuous Drain (Id) @ 25°C:66ab69b459c614644a63dc0c3e22ff0d
Drive Voltage (Max Rds On, Min Rds On):ca780190014b60ca18e65ea3a5bdf39b
Rds On (Max) @ Id, Vgs:eadeaba8e4cb19172bb256353982a1de
Vgs(th) (Max) @ Id:386866c225aaf9c7573eedf16202b00c
Gate Charge (Qg) (Max) @ Vgs:a3f4dd2442e67a9f5eb09e81739cea28
Vgs (Max):fb9ca950a6cec256edf558a59624ceb2
Input Capacitance (Ciss) (Max) @ Vds:742d614a8bc6e42c36fc78a96431075e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):336d5ebc5436534e61d16e63ddfca327
Operating Temperature:2bfdfc036647708637c6c2b106628aeb
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:952f8d52fbca6da722e72d520acd6edd
Package / Case:952f8d52fbca6da722e72d520acd6edd
In Stock: 183555
Stock:
183555 Can Ship Immediately
  • Делиться:
Для использования с
E3M0120090D
E3M0120090D
Wolfspeed, Inc.
SICFET N-CH 900V 23A TO247-3
PHT6NQ10T,135
PHT6NQ10T,135
Nexperia USA Inc.
MOSFET N-CH 100V 3A SOT223
FDP51N25
FDP51N25
onsemi
MOSFET N-CH 250V 51A TO220-3
PMV20XNER
PMV20XNER
Nexperia USA Inc.
MOSFET N-CH 30V 5.7A TO236AB
NVMFS5C646NLAFT3G
NVMFS5C646NLAFT3G
onsemi
MOSFET N-CH 60V 20A/93A 5DFN
IPB80N06S407ATMA2
IPB80N06S407ATMA2
Infineon Technologies
MOSFET N-CH 60V 80A TO263-3
IXFN32N120
IXFN32N120
IXYS
MOSFET N-CH 1200V 32A SOT-227B
NTMS4101PR2
NTMS4101PR2
onsemi
MOSFET P-CH 20V 6.9A 8SOIC
IPD06P005LSAUMA1
IPD06P005LSAUMA1
Infineon Technologies
MOSFET P-CH 60V 6.5A TO252-3
CP373-CMPDM303NH-CT
CP373-CMPDM303NH-CT
Central Semiconductor Corp
MOSFET N-CH 30V 3.6A DIE
62-0162PBF
62-0162PBF
Infineon Technologies
IC MOSFET
PJF2NA60_T0_00001
PJF2NA60_T0_00001
Panjit International Inc.
600V N-CHANNEL MOSFET
Вас также может заинтересовать
EPCDESIGNTOOL_RP-DC
EPCDESIGNTOOL_RP-DC
EPC
ENGR DIE FOR DAISY CHAIN
EPC9107
EPC9107
EPC
BOARD EVAL FOR EPC2015
EPC9126HC
EPC9126HC
EPC
LIDAR DEMO BOARD 100V EPC2001C
EPC90123
EPC90123
EPC
BOARD DEV EPC2218 100V EGAN FET
EPC9205
EPC9205
EPC
EVAL BOARD FOR EPC2045
EPC9027
EPC9027
EPC
BOARD DEV FOR EPC8007 40V EGAN
EPC2110ENGRT
EPC2110ENGRT
EPC
GAN TRANS 2N-CH 120V BUMPED DIE
EPC2052
EPC2052
EPC
GANFET N-CH 100V 8.2A DIE
EPC2031
EPC2031
EPC
GANFET NCH 60V 31A DIE
EPC2051
EPC2051
EPC
GANFET N-CH 100V 1.7A DIE
EPC2050
EPC2050
EPC
TRANS GAN BUMPED DIE