GP2T080A120H

GP2T080A120H

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GP2T080A120H
Mfr.:
Описание:
SIC MOSFET 1200V 80M TO-247-4L
Упаковка:
Tube
Datasheet:
GP2T080A120H Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GP2T080A120H
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:SemiQ
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:ed9a2411b032b5ad765b9d5f6b1bc8e1
Drain to Source Voltage (Vdss):edca1d2343e4e5615ce51a879f622a76
Current - Continuous Drain (Id) @ 25°C:822fa9074467f53dd633c6786e269596
Drive Voltage (Max Rds On, Min Rds On):c828a77388b77eed02df2bdc48ce88f8
Rds On (Max) @ Id, Vgs:e42daa4a9c17550338d226206d907ed9
Vgs(th) (Max) @ Id:140803a8f8b2cc64f72c5875d5e806e6
Gate Charge (Qg) (Max) @ Vgs:b51bb47dd422a586f0c4ca3d09730277
Vgs (Max):1d451f433f14e0cd99646c5802738209
Input Capacitance (Ciss) (Max) @ Vds:a4f322cbb29569dc2a7c80c65b326747
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):64bb138b078a8c7996f04ae426c1050b
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:f1f05fa7d6a97ae451c8efbfb2831dfa
Package / Case:f1f05fa7d6a97ae451c8efbfb2831dfa
In Stock: 90
Stock:
90 Can Ship Immediately
  • Делиться:
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