G08N06S

G08N06S

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G08N06S
Описание:
N60V, RD(MAX)<30M@10V,RD(MAX)<40
Упаковка:
Tape & Reel (TR)
Datasheet:
G08N06S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G08N06S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:c8334ef5d2640f5ce1f0e830c938d440
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:789177a380cd38e98510a9abced37c24
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:730e0e196e702729583c9674383eddc3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:fbd3ce9e284827a6f04c717b0ba73f1e
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):c2530d5e7da39ea670d9fb13a57ed38d
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 0
Stock:
0 Can Ship Immediately
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