25P06

25P06

Images are for reference only
See Product Specifications

25P06
Описание:
P60V,RD(MAX)<45M@-10V,VTH2V~3V T
Упаковка:
Tape & Reel (TR)
Datasheet:
25P06 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:25P06
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:9945a529f9f3f7e23d6cd49cab56133a
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:b306e492b5613991dbec23798b691a05
Drive Voltage (Max Rds On, Min Rds On):76f7bec4411c6fbb49ed5d21d8974faf
Rds On (Max) @ Id, Vgs:a27e505b3bf8f0f3271ec9080cd283c4
Vgs(th) (Max) @ Id:66756bbbd2b15b665d5248f5ca1758a1
Gate Charge (Qg) (Max) @ Vgs:6c34ab415af6e1fcb39f91c86ab02ea4
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:241f4fd6fcc93eff551d145ff1167533
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):b1b9c7ff3bcb5642e62edfb8c3bca1bc
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:26334f21813abf4634f508e2476262a0
Package / Case:d6d5b809beb9f171e5b4097664b4dd95
In Stock: 0
Stock:
0 Can Ship Immediately
  • Делиться:
Для использования с
TSM2N7002AKCX RFG
TSM2N7002AKCX RFG
Taiwan Semiconductor Corporation
60V, 0.3A, SINGLE N-CHANNEL POWE
IPP65R600C6
IPP65R600C6
Infineon Technologies
N-CHANNEL POWER MOSFET
MTB55N06ZT4
MTB55N06ZT4
onsemi
N-CHANNEL POWER MOSFET
FDPF33N25TRDTU
FDPF33N25TRDTU
onsemi
MOSFET N-CHANNEL 250V TO220F
IPT60R065S7XTMA1
IPT60R065S7XTMA1
Infineon Technologies
MOSFET N-CH 600V 8A 8HSOF
IPA086N10N3 G
IPA086N10N3 G
Infineon Technologies
OPTLMOS 3 POWER MOSFET
IPB042N10NF2SATMA1
IPB042N10NF2SATMA1
Infineon Technologies
TRENCH >=100V
SQP120N10-3M8_GE3
SQP120N10-3M8_GE3
Vishay Siliconix
MOSFET N-CH 100V 120A TO220AB
APT30M60J
APT30M60J
Microchip Technology
MOSFET N-CH 600V 31A ISOTOP
AUIRFN8403TR
AUIRFN8403TR
Infineon Technologies
AUIRFN8403 - 20V-40V N-CHANNEL A
IPS09N03LB G
IPS09N03LB G
Infineon Technologies
MOSFET N-CH 30V 50A TO251-3
2SK3481-AZ
2SK3481-AZ
Renesas Electronics America Inc
MOSFET N-CH 100V 30A TO220AB
Вас также может заинтересовать
G33N03D3
G33N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
1002
1002
Goford Semiconductor
N100V,RD(MAX)<250M@10V,RD(MAX)<2
G3404LL
G3404LL
Goford Semiconductor
N30V,RD(MAX)<22M@10V,RD(MAX)<35M
G28N03D3
G28N03D3
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<18M
G35N02K
G35N02K
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<18
G60N04K
G60N04K
Goford Semiconductor
N40V,RD(MAX)<7M@10V,RD(MAX)<12M@
G20P08K
G20P08K
Goford Semiconductor
P-80V,RD(MAX)<62M@-10V,RD(MAX)<7
G12P04K
G12P04K
Goford Semiconductor
P40V,RD(MAX)<35M@-10V,RD(MAX)<45
GC11N65M
GC11N65M
Goford Semiconductor
N650V,RD(MAX)<360M@10V,VTH2.5V~4
G60N10T
G60N10T
Goford Semiconductor
N100V,RD(MAX)<25M@10V,RD(MAX)<30
G65P06T
G65P06T
Goford Semiconductor
P-60V,RD(MAX)<18M@-10V,VTH-2.0V~
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.