Logo Logo
0
Мой запрос предложений
English


G110N06T

G110N06T

Images are for reference only
See Product Specifications

G110N06T
Mfr.:
Описание:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Упаковка:
Tube
Datasheet:
G110N06T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G110N06T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6c87ff8bc9675c376c740b0cd3106e14
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:ccc5f1a553ce8b23acf74c5d7e020251
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:24648acf96f93fd04f0fd95dbd8d43e3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:47c7a7f18c411c61518c53cad1a58a43
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ce5340b24141d0946f2d6a52045d3c27
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 100
Stock:
100 Can Ship Immediately
  • Делиться:
Для использования с
IPB80N03S4L03
IPB80N03S4L03
Infineon Technologies
N-CHANNEL POWER MOSFET
STF12N50DM2
STF12N50DM2
STMicroelectronics
MOSFET N-CH 500V 11A TO220FP
FQB50N06LTM
FQB50N06LTM
onsemi
MOSFET N-CH 60V 52.4A D2PAK
TK40E10N1,S1X
TK40E10N1,S1X
Toshiba Semiconductor and Storage
MOSFET N CH 100V 90A TO220
SQJ457EP-T1_BE3
SQJ457EP-T1_BE3
Vishay Siliconix
P-CHANNEL 60-V (D-S) 175C MOSFET
DMP4025LSSQ-13
DMP4025LSSQ-13
Diodes Incorporated
MOSFET P-CH 40V 6A 8SO
IXTV280N055TS
IXTV280N055TS
IXYS
MOSFET N-CH 55V 280A PLUS-220SMD
IRF7603TRPBF
IRF7603TRPBF
Infineon Technologies
MOSFET N-CH 30V 5.6A MICRO8
IPP70N04S307AKSA1
IPP70N04S307AKSA1
Infineon Technologies
MOSFET N-CH 40V 80A TO220-3
IXFE39N90
IXFE39N90
IXYS
MOSFET N-CH 900V 34A SOT227B
IXTK33N50
IXTK33N50
IXYS
MOSFET N-CH 500V 33A TO264
IRFI7536GPBF
IRFI7536GPBF
Infineon Technologies
MOSFET N-CH 60V 86A TO220
Вас также может заинтересовать
G5P40L
G5P40L
Goford Semiconductor
P40V,RD(MAX)<85M@-10V,RD(MAX)<12
G3401L
G3401L
Goford Semiconductor
P30V,RD(MAX)<60M@-10V,RD(MAX)<70
G33N03S
G33N03S
Goford Semiconductor
N30V,RD(MAX)<12M@10V,RD(MAX)<13M
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G15N10C
G15N10C
Goford Semiconductor
N100V,RD(MAX)<110M@10V,RD(MAX)<1
G01N20LE
G01N20LE
Goford Semiconductor
N200V,RD(MAX)<850M@10V,RD(MAX)<9
G45P02D3
G45P02D3
Goford Semiconductor
P20V,RD(MAX)<[email protected],RD(MAX)<
G12P10K
G12P10K
Goford Semiconductor
P100V,RD(MAX)<200M@-10V,RD(MAX)<
G70P02K
G70P02K
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<
GT100N12M
GT100N12M
Goford Semiconductor
N120V,RD(MAX)<10M@10V,VTH2.5V~3.
G07P04S
G07P04S
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22
G110N06T
G110N06T
Goford Semiconductor
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.