G110N06T

G110N06T

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G110N06T
Описание:
N60V,RD(MAX)<6.4M@10V,RD(MAX)<8.
Упаковка:
Tube
Datasheet:
G110N06T Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G110N06T
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tube
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:6c87ff8bc9675c376c740b0cd3106e14
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:ccc5f1a553ce8b23acf74c5d7e020251
Vgs(th) (Max) @ Id:bae68a70e94fb31c33c772f4fdf89b99
Gate Charge (Qg) (Max) @ Vgs:24648acf96f93fd04f0fd95dbd8d43e3
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:47c7a7f18c411c61518c53cad1a58a43
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):ce5340b24141d0946f2d6a52045d3c27
Operating Temperature:57d4d9eedc2deb0e981150db4dec7a0a
Mounting Type:506558024381a3c368cb88e9e94f6845
Supplier Device Package:21023271cb741070ebf3efcc38cc7f20
Package / Case:46bb638de2ea693de650d7f1c3115468
In Stock: 100
Stock:
100 Can Ship Immediately
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