G2014

G2014

Images are for reference only
See Product Specifications

G2014
Описание:
N20V,RD(MAX)<[email protected],RD(MAX)<11M
Упаковка:
Tape & Reel (TR)
Datasheet:
G2014 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2014
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c41948a95780bdf58d7eb2a34dbc26cd
Drive Voltage (Max Rds On, Min Rds On):b076aa5277458f91fd2c66160075162b
Rds On (Max) @ Id, Vgs:8e7d8e317f2c830689a6177d07d1e216
Vgs(th) (Max) @ Id:97851845d1794c1701252b6a9d63f32b
Gate Charge (Qg) (Max) @ Vgs:4f13a25efd447fb84e77b87cc97e87fc
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:49399bb04d5fd6465936bce2f6f6abb7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):33fec48efa34ed7084458af5d9b87d31
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:55fad8b055c7e815c4a686c4a7dc6792
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
Для использования с
IXTA76P10T
IXTA76P10T
IXYS
MOSFET P-CH 100V 76A TO263
IXFN400N15X3
IXFN400N15X3
IXYS
MOSFET N-CH 150V 400A SOT227B
DMG8880LK3-13
DMG8880LK3-13
Diodes Incorporated
MOSFET N-CH 30V 11A TO252
SIR638DP-T1-RE3
SIR638DP-T1-RE3
Vishay Siliconix
MOSFET N-CH 40V 100A PPAK SO-8
DMJ65H650SCTI
DMJ65H650SCTI
Diodes Incorporated
MOSFET N-CH 650V 10A ITO220AB
FQPF9N08L
FQPF9N08L
onsemi
MOSFET N-CH 80V 7A TO220F
SPD26N06S2L-35
SPD26N06S2L-35
Infineon Technologies
MOSFET N-CH 55V 30A TO252-3
DMN4027SSS-13
DMN4027SSS-13
Diodes Incorporated
MOSFET N-CH 40V 6A 8SO
SIJ484DP-T1-GE3
SIJ484DP-T1-GE3
Vishay Siliconix
MOSFET N-CH 30V 35A PPAK SO-8
DMN3110LCP3-7
DMN3110LCP3-7
Diodes Incorporated
MOSFET N-CH 30V 3.2A 3DFN
MSC360SMA120SA
MSC360SMA120SA
Microchip Technology
MOSFET SIC 1200 V 360 MOHM TO-26
RT1E050RPTR
RT1E050RPTR
Rohm Semiconductor
MOSFET P-CH 30V 5A 8TSST
Вас также может заинтересовать
G7P03S
G7P03S
Goford Semiconductor
P30V,RD(MAX)<22M@-10V,RD(MAX)<33
G2014
G2014
Goford Semiconductor
N20V,RD(MAX)<[email protected],RD(MAX)<11M
G50N03K
G50N03K
Goford Semiconductor
N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
G29
G29
Goford Semiconductor
P15V,RD(MAX)<[email protected],RD(MAX)<4
G65P06K
G65P06K
Goford Semiconductor
P60V,RD(MAX)<18M@-10V,VTH-2V~-3.
GT52N10D5
GT52N10D5
Goford Semiconductor
N100V,RD(MAX)<7.5M@10V,RD(MAX)<1
GT55N06D5
GT55N06D5
Goford Semiconductor
N60V,RD(MAX)<8M@10V,RD(MAX)<13M@
G02P06
G02P06
Goford Semiconductor
P60V,RD(MAX)<190M@-10V,RD(MAX)<2
G7P03L
G7P03L
Goford Semiconductor
P30V,RD(MAX)<23M@-10V,RD(MAX)<34
G3035L
G3035L
Goford Semiconductor
P30V,RD(MAX)<59M@-10V,RD(MAX)<75
GT52N10T
GT52N10T
Goford Semiconductor
N100V,RD(MAX)<9M@10V,RD(MAX)<15M
G07P04S
G07P04S
Goford Semiconductor
P40V,RD(MAX)<18M@-10V,RD(MAX)<22