G2014

G2014

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G2014
Описание:
N20V,RD(MAX)<[email protected],RD(MAX)<11M
Упаковка:
Tape & Reel (TR)
Datasheet:
G2014 Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:G2014
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):1d4b1d1d0414ed964cb9de7f5a150f63
Current - Continuous Drain (Id) @ 25°C:c41948a95780bdf58d7eb2a34dbc26cd
Drive Voltage (Max Rds On, Min Rds On):b076aa5277458f91fd2c66160075162b
Rds On (Max) @ Id, Vgs:8e7d8e317f2c830689a6177d07d1e216
Vgs(th) (Max) @ Id:97851845d1794c1701252b6a9d63f32b
Gate Charge (Qg) (Max) @ Vgs:4f13a25efd447fb84e77b87cc97e87fc
Vgs (Max):ed5450af4f622d5d61945c0592c793a8
Input Capacitance (Ciss) (Max) @ Vds:49399bb04d5fd6465936bce2f6f6abb7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):33fec48efa34ed7084458af5d9b87d31
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:55fad8b055c7e815c4a686c4a7dc6792
Package / Case:5ca2465698459a103daf1ec0ae24ba5d
In Stock: 3000
Stock:
3000 Can Ship Immediately
  • Делиться:
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