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GT110N06S

GT110N06S

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See Product Specifications

GT110N06S
Mfr.:
Описание:
N60V,RD(MAX)<[email protected],RD(MAX)<1
Упаковка:
Tape & Reel (TR)
Datasheet:
GT110N06S Datasheet (PDF)
ECAD-модель:
-
Атрибуты продукта
номер части:GT110N06S
Категория:Discrete Semiconductor Products
Подкатегория:Transistors - FETs, MOSFETs - Single
Производитель:Goford Semiconductor
Упаковка:Tape & Reel (TR)
Product Status:4d3d769b812b6faa6b76e1a8abaece2d
FET Type:43272ae8a787f198ca6b6227abc259ef
Technology:54a5be1d27124bd4f8897fe25aa94ecc
Drain to Source Voltage (Vdss):5568a11e95c42251b4839598cb5b4518
Current - Continuous Drain (Id) @ 25°C:c41948a95780bdf58d7eb2a34dbc26cd
Drive Voltage (Max Rds On, Min Rds On):214881f189d1d05281deda79f8c1bf77
Rds On (Max) @ Id, Vgs:eceaeec3a891b97f02e18b0f753d2352
Vgs(th) (Max) @ Id:604e14281627abaa31ad75dce0e5c80f
Gate Charge (Qg) (Max) @ Vgs:adefe80c4a89824fe268dd1bd0082a35
Vgs (Max):ce6f0ee0e28319cd77230729fffeb8d1
Input Capacitance (Ciss) (Max) @ Vds:d7564c04d9acd1725db5fd5dcf8ed6c7
FET Feature:336d5ebc5436534e61d16e63ddfca327
Power Dissipation (Max):33fec48efa34ed7084458af5d9b87d31
Operating Temperature:6a357bb51737d359c8bcaa66995aadb4
Mounting Type:6277abee52798fa9d158f75ff84dd873
Supplier Device Package:fe7cbfc5c8dc998814597054b009cbc7
Package / Case:f80d2dd5409d1e9f8a546eb6d6a8728d
In Stock: 6837
Stock:
6837 Can Ship Immediately
  • Делиться:
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