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See Product Specifications
| номер части: | GT110N06S |
| Категория: | Discrete Semiconductor Products |
| Подкатегория: | Transistors - FETs, MOSFETs - Single |
| Производитель: | Goford Semiconductor |
| Упаковка: | Tape & Reel (TR) |
| Product Status: | 4d3d769b812b6faa6b76e1a8abaece2d |
| FET Type: | 43272ae8a787f198ca6b6227abc259ef |
| Technology: | 54a5be1d27124bd4f8897fe25aa94ecc |
| Drain to Source Voltage (Vdss): | 5568a11e95c42251b4839598cb5b4518 |
| Current - Continuous Drain (Id) @ 25°C: | c41948a95780bdf58d7eb2a34dbc26cd |
| Drive Voltage (Max Rds On, Min Rds On): | 214881f189d1d05281deda79f8c1bf77 |
| Rds On (Max) @ Id, Vgs: | eceaeec3a891b97f02e18b0f753d2352 |
| Vgs(th) (Max) @ Id: | 604e14281627abaa31ad75dce0e5c80f |
| Gate Charge (Qg) (Max) @ Vgs: | adefe80c4a89824fe268dd1bd0082a35 |
| Vgs (Max): | ce6f0ee0e28319cd77230729fffeb8d1 |
| Input Capacitance (Ciss) (Max) @ Vds: | d7564c04d9acd1725db5fd5dcf8ed6c7 |
| FET Feature: | 336d5ebc5436534e61d16e63ddfca327 |
| Power Dissipation (Max): | 33fec48efa34ed7084458af5d9b87d31 |
| Operating Temperature: | 6a357bb51737d359c8bcaa66995aadb4 |
| Mounting Type: | 6277abee52798fa9d158f75ff84dd873 |
| Supplier Device Package: | fe7cbfc5c8dc998814597054b009cbc7 |
| Package / Case: | f80d2dd5409d1e9f8a546eb6d6a8728d |
